Chemical supply device and chemical supply system including the same
다양한 실시예에 따르면, 반도체 공정에 이용되는 케미컬 용액을 수용하고, 상기 케미컬 용액을 출력 가스로 기화시키기 위한 입력 가스를 투입받는 버블러; 상기 버블러를 수용하고, 상기 케미컬 용액의 온도를 조절하기 위한 항온조; 상기 버블러와 유체적으로 연결되고, 상기 케미컬 용액, 상기 입력 가스 및 출력 가스의 유로를 제공하도록 구성된 밸브 모듈; 상기 버블러에 담긴 상기 케미컬 용액의 잔존 레벨을 감지하기 위한 레벨 센서; 컨트롤러; 및 상기 컨트롤러를 구동시키기 위한 프로그램이 저장된 메모리;를 포함하고, 상기 컨트롤러는, 상...
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| creator | KIM JEEHUN KIM MYEONG MUN LIM TAE HWA |
| description | 다양한 실시예에 따르면, 반도체 공정에 이용되는 케미컬 용액을 수용하고, 상기 케미컬 용액을 출력 가스로 기화시키기 위한 입력 가스를 투입받는 버블러; 상기 버블러를 수용하고, 상기 케미컬 용액의 온도를 조절하기 위한 항온조; 상기 버블러와 유체적으로 연결되고, 상기 케미컬 용액, 상기 입력 가스 및 출력 가스의 유로를 제공하도록 구성된 밸브 모듈; 상기 버블러에 담긴 상기 케미컬 용액의 잔존 레벨을 감지하기 위한 레벨 센서; 컨트롤러; 및 상기 컨트롤러를 구동시키기 위한 프로그램이 저장된 메모리;를 포함하고, 상기 컨트롤러는, 상기 레벨 센서로부터 획득한 상기 케미컬 용액의 잔존 레벨에 기초하여, 상기 출력 가스의 유량이 지정된 유량을 가지도록 상기 입력 가스의 타겟 유량을 판단하도록 구성된 케미컬 공급 장치가 제공될 수 있다.
According to one embodiment, a chemical supply device includes: a bubbler configured to contain a chemical solution which is used in a semiconductor process and to receive an input gas for vaporizing the chemical solution into an output gas; a constant-temperature bath configured to contain the bubbler and to adjust a temperature of the chemical solution; a valve module fluidically connected with the bubbler and configured to provide channels for the chemical solution, the input gas, and the output gas; a level sensor configured to detect a remaining level of the chemical solution; a controller; and a memory configured to store a program for operating the controller, and the controller is configured to determine a target flow rate of the input gas to cause a flow rate of the output gas to have a designated flow rate, based on the remaining level of the chemical solution. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20240129638A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20240129638A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20240129638A3</originalsourceid><addsrcrecordid>eNrjZHBxzkjNzUxOzFEoLi0oyKlUSEkty0xOVUjMS1FIRpMqriwuSc1VyMxLzilNycxLVyjJSFUoTsxN5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgZGJgaGRpZmxhaOxsSpAgCHZTPD</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Chemical supply device and chemical supply system including the same</title><source>esp@cenet</source><creator>KIM JEEHUN ; KIM MYEONG MUN ; LIM TAE HWA</creator><creatorcontrib>KIM JEEHUN ; KIM MYEONG MUN ; LIM TAE HWA</creatorcontrib><description>다양한 실시예에 따르면, 반도체 공정에 이용되는 케미컬 용액을 수용하고, 상기 케미컬 용액을 출력 가스로 기화시키기 위한 입력 가스를 투입받는 버블러; 상기 버블러를 수용하고, 상기 케미컬 용액의 온도를 조절하기 위한 항온조; 상기 버블러와 유체적으로 연결되고, 상기 케미컬 용액, 상기 입력 가스 및 출력 가스의 유로를 제공하도록 구성된 밸브 모듈; 상기 버블러에 담긴 상기 케미컬 용액의 잔존 레벨을 감지하기 위한 레벨 센서; 컨트롤러; 및 상기 컨트롤러를 구동시키기 위한 프로그램이 저장된 메모리;를 포함하고, 상기 컨트롤러는, 상기 레벨 센서로부터 획득한 상기 케미컬 용액의 잔존 레벨에 기초하여, 상기 출력 가스의 유량이 지정된 유량을 가지도록 상기 입력 가스의 타겟 유량을 판단하도록 구성된 케미컬 공급 장치가 제공될 수 있다.
According to one embodiment, a chemical supply device includes: a bubbler configured to contain a chemical solution which is used in a semiconductor process and to receive an input gas for vaporizing the chemical solution into an output gas; a constant-temperature bath configured to contain the bubbler and to adjust a temperature of the chemical solution; a valve module fluidically connected with the bubbler and configured to provide channels for the chemical solution, the input gas, and the output gas; a level sensor configured to detect a remaining level of the chemical solution; a controller; and a memory configured to store a program for operating the controller, and the controller is configured to determine a target flow rate of the input gas to cause a flow rate of the output gas to have a designated flow rate, based on the remaining level of the chemical solution.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MEASURING ; MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUIDLEVEL ; METALLURGY ; METERING BY VOLUME ; PHYSICS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TESTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240828&DB=EPODOC&CC=KR&NR=20240129638A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240828&DB=EPODOC&CC=KR&NR=20240129638A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM JEEHUN</creatorcontrib><creatorcontrib>KIM MYEONG MUN</creatorcontrib><creatorcontrib>LIM TAE HWA</creatorcontrib><title>Chemical supply device and chemical supply system including the same</title><description>다양한 실시예에 따르면, 반도체 공정에 이용되는 케미컬 용액을 수용하고, 상기 케미컬 용액을 출력 가스로 기화시키기 위한 입력 가스를 투입받는 버블러; 상기 버블러를 수용하고, 상기 케미컬 용액의 온도를 조절하기 위한 항온조; 상기 버블러와 유체적으로 연결되고, 상기 케미컬 용액, 상기 입력 가스 및 출력 가스의 유로를 제공하도록 구성된 밸브 모듈; 상기 버블러에 담긴 상기 케미컬 용액의 잔존 레벨을 감지하기 위한 레벨 센서; 컨트롤러; 및 상기 컨트롤러를 구동시키기 위한 프로그램이 저장된 메모리;를 포함하고, 상기 컨트롤러는, 상기 레벨 센서로부터 획득한 상기 케미컬 용액의 잔존 레벨에 기초하여, 상기 출력 가스의 유량이 지정된 유량을 가지도록 상기 입력 가스의 타겟 유량을 판단하도록 구성된 케미컬 공급 장치가 제공될 수 있다.
According to one embodiment, a chemical supply device includes: a bubbler configured to contain a chemical solution which is used in a semiconductor process and to receive an input gas for vaporizing the chemical solution into an output gas; a constant-temperature bath configured to contain the bubbler and to adjust a temperature of the chemical solution; a valve module fluidically connected with the bubbler and configured to provide channels for the chemical solution, the input gas, and the output gas; a level sensor configured to detect a remaining level of the chemical solution; a controller; and a memory configured to store a program for operating the controller, and the controller is configured to determine a target flow rate of the input gas to cause a flow rate of the output gas to have a designated flow rate, based on the remaining level of the chemical solution.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MEASURING</subject><subject>MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUIDLEVEL</subject><subject>METALLURGY</subject><subject>METERING BY VOLUME</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBxzkjNzUxOzFEoLi0oyKlUSEkty0xOVUjMS1FIRpMqriwuSc1VyMxLzilNycxLVyjJSFUoTsxN5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgZGJgaGRpZmxhaOxsSpAgCHZTPD</recordid><startdate>20240828</startdate><enddate>20240828</enddate><creator>KIM JEEHUN</creator><creator>KIM MYEONG MUN</creator><creator>LIM TAE HWA</creator><scope>EVB</scope></search><sort><creationdate>20240828</creationdate><title>Chemical supply device and chemical supply system including the same</title><author>KIM JEEHUN ; KIM MYEONG MUN ; LIM TAE HWA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20240129638A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MEASURING</topic><topic>MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUIDLEVEL</topic><topic>METALLURGY</topic><topic>METERING BY VOLUME</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM JEEHUN</creatorcontrib><creatorcontrib>KIM MYEONG MUN</creatorcontrib><creatorcontrib>LIM TAE HWA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM JEEHUN</au><au>KIM MYEONG MUN</au><au>LIM TAE HWA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chemical supply device and chemical supply system including the same</title><date>2024-08-28</date><risdate>2024</risdate><abstract>다양한 실시예에 따르면, 반도체 공정에 이용되는 케미컬 용액을 수용하고, 상기 케미컬 용액을 출력 가스로 기화시키기 위한 입력 가스를 투입받는 버블러; 상기 버블러를 수용하고, 상기 케미컬 용액의 온도를 조절하기 위한 항온조; 상기 버블러와 유체적으로 연결되고, 상기 케미컬 용액, 상기 입력 가스 및 출력 가스의 유로를 제공하도록 구성된 밸브 모듈; 상기 버블러에 담긴 상기 케미컬 용액의 잔존 레벨을 감지하기 위한 레벨 센서; 컨트롤러; 및 상기 컨트롤러를 구동시키기 위한 프로그램이 저장된 메모리;를 포함하고, 상기 컨트롤러는, 상기 레벨 센서로부터 획득한 상기 케미컬 용액의 잔존 레벨에 기초하여, 상기 출력 가스의 유량이 지정된 유량을 가지도록 상기 입력 가스의 타겟 유량을 판단하도록 구성된 케미컬 공급 장치가 제공될 수 있다.
According to one embodiment, a chemical supply device includes: a bubbler configured to contain a chemical solution which is used in a semiconductor process and to receive an input gas for vaporizing the chemical solution into an output gas; a constant-temperature bath configured to contain the bubbler and to adjust a temperature of the chemical solution; a valve module fluidically connected with the bubbler and configured to provide channels for the chemical solution, the input gas, and the output gas; a level sensor configured to detect a remaining level of the chemical solution; a controller; and a memory configured to store a program for operating the controller, and the controller is configured to determine a target flow rate of the input gas to cause a flow rate of the output gas to have a designated flow rate, based on the remaining level of the chemical solution.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUIDLEVEL METALLURGY METERING BY VOLUME PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING |
| title | Chemical supply device and chemical supply system including the same |
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