DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS

DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS

본 개시는 반도체 구조체들에 관한 것이고, 더 상세하게는, 활성 영역들에 격리 구조체들을 갖는 디바이스들과 제조 방법들에 관한 것이다. 이 구조체는, 활성 영역; 활성 영역 내의 복수의 격리 구조체들; 활성 영역 내의 복수의 격리 구조체들과 중첩하는 복수의 게이트 구조체들; 및 복수의 게이트 구조체들 및 복수의 격리 구조체들의 측면들 상의 확산 영역들을 포함한다. The present disclosure relates to semiconductor structures and, more particularly, to devices w...

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Hauptverfasser: ZHAN HUI, ETHIRAJAN TAMILMANI, SHANBHAG KAUSTUBH, KOZARSKY ERIC S, MULFINGER GEORGE R, TOKRANOV ANTON V
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ZHAN HUI
ETHIRAJAN TAMILMANI
SHANBHAG KAUSTUBH
KOZARSKY ERIC S
MULFINGER GEORGE R
TOKRANOV ANTON V
description 본 개시는 반도체 구조체들에 관한 것이고, 더 상세하게는, 활성 영역들에 격리 구조체들을 갖는 디바이스들과 제조 방법들에 관한 것이다. 이 구조체는, 활성 영역; 활성 영역 내의 복수의 격리 구조체들; 활성 영역 내의 복수의 격리 구조체들과 중첩하는 복수의 게이트 구조체들; 및 복수의 게이트 구조체들 및 복수의 격리 구조체들의 측면들 상의 확산 영역들을 포함한다. The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures (14) within the active region; a plurality of gate structures (16) overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures.
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The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures (14) within the active region; a plurality of gate structures (16) overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240718&amp;DB=EPODOC&amp;CC=KR&amp;NR=20240112195A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240718&amp;DB=EPODOC&amp;CC=KR&amp;NR=20240112195A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHAN HUI</creatorcontrib><creatorcontrib>ETHIRAJAN TAMILMANI</creatorcontrib><creatorcontrib>SHANBHAG KAUSTUBH</creatorcontrib><creatorcontrib>KOZARSKY ERIC S</creatorcontrib><creatorcontrib>MULFINGER GEORGE R</creatorcontrib><creatorcontrib>TOKRANOV ANTON V</creatorcontrib><title>DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS</title><description>본 개시는 반도체 구조체들에 관한 것이고, 더 상세하게는, 활성 영역들에 격리 구조체들을 갖는 디바이스들과 제조 방법들에 관한 것이다. 이 구조체는, 활성 영역; 활성 영역 내의 복수의 격리 구조체들; 활성 영역 내의 복수의 격리 구조체들과 중첩하는 복수의 게이트 구조체들; 및 복수의 게이트 구조체들 및 복수의 격리 구조체들의 측면들 상의 확산 영역들을 포함한다. The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures (14) within the active region; a plurality of gate structures (16) overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBycQ3zdHZVCPcM8VDwDPb3cQzx9PdTCA4JCnUOCQ1yDVbw9FNwdA7xDHNVCHJ1B8oF8zCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSSeO8gIwMjEwNDQyNDS1NHY-JUAQAoPCfX</recordid><startdate>20240718</startdate><enddate>20240718</enddate><creator>ZHAN HUI</creator><creator>ETHIRAJAN TAMILMANI</creator><creator>SHANBHAG KAUSTUBH</creator><creator>KOZARSKY ERIC S</creator><creator>MULFINGER GEORGE R</creator><creator>TOKRANOV ANTON V</creator><scope>EVB</scope></search><sort><creationdate>20240718</creationdate><title>DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS</title><author>ZHAN HUI ; ETHIRAJAN TAMILMANI ; SHANBHAG KAUSTUBH ; KOZARSKY ERIC S ; MULFINGER GEORGE R ; TOKRANOV ANTON V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20240112195A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHAN HUI</creatorcontrib><creatorcontrib>ETHIRAJAN TAMILMANI</creatorcontrib><creatorcontrib>SHANBHAG KAUSTUBH</creatorcontrib><creatorcontrib>KOZARSKY ERIC S</creatorcontrib><creatorcontrib>MULFINGER GEORGE R</creatorcontrib><creatorcontrib>TOKRANOV ANTON V</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHAN HUI</au><au>ETHIRAJAN TAMILMANI</au><au>SHANBHAG KAUSTUBH</au><au>KOZARSKY ERIC S</au><au>MULFINGER GEORGE R</au><au>TOKRANOV ANTON V</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS</title><date>2024-07-18</date><risdate>2024</risdate><abstract>본 개시는 반도체 구조체들에 관한 것이고, 더 상세하게는, 활성 영역들에 격리 구조체들을 갖는 디바이스들과 제조 방법들에 관한 것이다. 이 구조체는, 활성 영역; 활성 영역 내의 복수의 격리 구조체들; 활성 영역 내의 복수의 격리 구조체들과 중첩하는 복수의 게이트 구조체들; 및 복수의 게이트 구조체들 및 복수의 격리 구조체들의 측면들 상의 확산 영역들을 포함한다. The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures (14) within the active region; a plurality of gate structures (16) overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS
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