WAFER DEPOSITION EQUIPMENT AND METHOD FOR DISCHARGING WAFER USING THE SAME
본 발명은 웨이퍼 증착 설비 및 이를 이용한 웨이퍼 제전 방법에 관한 것으로, 프로세스챔버의 샤워헤드에 관로를 매개로 연결되고, 상기 프로세스챔버의 외부에서 플라즈마를 생성하여 프로세스챔버로 플라즈마 가스를 공급하는 리모트플라즈마장치; 상기 리모트플라즈마장치에 관로를 매개로 연결되고, 상기 리모트플라즈마장치에 비활성가스를 공급하는 비활성가스공급원; 및 상기 리모트플라즈마장치의 작동을 제어하는 제어부;를 포함한다. 따라서, 웨이퍼를 손상없이 안전하게 제전하고 제전시 파티클의 발생을 방지할 수 있게 된다. The present inve...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | JIN CHANG HYUN HWANG YOON JUNG LEE CHUL JO UNG HYUN LEE SEONG DO KIM JAE HYEON PARK SO YEON YI EUN SOO LEE JUNG HEON KIM KWAN HEE |
| description | 본 발명은 웨이퍼 증착 설비 및 이를 이용한 웨이퍼 제전 방법에 관한 것으로, 프로세스챔버의 샤워헤드에 관로를 매개로 연결되고, 상기 프로세스챔버의 외부에서 플라즈마를 생성하여 프로세스챔버로 플라즈마 가스를 공급하는 리모트플라즈마장치; 상기 리모트플라즈마장치에 관로를 매개로 연결되고, 상기 리모트플라즈마장치에 비활성가스를 공급하는 비활성가스공급원; 및 상기 리모트플라즈마장치의 작동을 제어하는 제어부;를 포함한다. 따라서, 웨이퍼를 손상없이 안전하게 제전하고 제전시 파티클의 발생을 방지할 수 있게 된다.
The present invention relates to a wafer deposition apparatus and a wafer de-energizing method using the same, comprising: a remote plasma device which is connected to a shower head of a process chamber through a pipeline and generates a plasma having a lower intensity than a plasma for deposition outside the process chamber, supplying the generated plasma gas to the inside of the process chamber; the inert gas supply source is connected to the remote plasma device through a pipeline and supplies inert gas to the remote plasma device; and a control unit for controlling the operation of the remote plasma device. Therefore, safe de-electrification is performed on the wafer without damage, and particles can be prevented from being generated during de-electrification. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20240104846A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20240104846A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20240104846A3</originalsourceid><addsrcrecordid>eNrjZPAKd3RzDVJwcQ3wD_YM8fT3U3ANDPUM8HX1C1Fw9HNR8HUN8fB3UXDzB6rxDHb2cAxy9_RzV4DoCg0GsUM8XBWCHX1deRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJvHeQkYGRiYGhgYmFiZmjMXGqAAepLhY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>WAFER DEPOSITION EQUIPMENT AND METHOD FOR DISCHARGING WAFER USING THE SAME</title><source>esp@cenet</source><creator>JIN CHANG HYUN ; HWANG YOON JUNG ; LEE CHUL ; JO UNG HYUN ; LEE SEONG DO ; KIM JAE HYEON ; PARK SO YEON ; YI EUN SOO ; LEE JUNG HEON ; KIM KWAN HEE</creator><creatorcontrib>JIN CHANG HYUN ; HWANG YOON JUNG ; LEE CHUL ; JO UNG HYUN ; LEE SEONG DO ; KIM JAE HYEON ; PARK SO YEON ; YI EUN SOO ; LEE JUNG HEON ; KIM KWAN HEE</creatorcontrib><description>본 발명은 웨이퍼 증착 설비 및 이를 이용한 웨이퍼 제전 방법에 관한 것으로, 프로세스챔버의 샤워헤드에 관로를 매개로 연결되고, 상기 프로세스챔버의 외부에서 플라즈마를 생성하여 프로세스챔버로 플라즈마 가스를 공급하는 리모트플라즈마장치; 상기 리모트플라즈마장치에 관로를 매개로 연결되고, 상기 리모트플라즈마장치에 비활성가스를 공급하는 비활성가스공급원; 및 상기 리모트플라즈마장치의 작동을 제어하는 제어부;를 포함한다. 따라서, 웨이퍼를 손상없이 안전하게 제전하고 제전시 파티클의 발생을 방지할 수 있게 된다.
The present invention relates to a wafer deposition apparatus and a wafer de-energizing method using the same, comprising: a remote plasma device which is connected to a shower head of a process chamber through a pipeline and generates a plasma having a lower intensity than a plasma for deposition outside the process chamber, supplying the generated plasma gas to the inside of the process chamber; the inert gas supply source is connected to the remote plasma device through a pipeline and supplies inert gas to the remote plasma device; and a control unit for controlling the operation of the remote plasma device. Therefore, safe de-electrification is performed on the wafer without damage, and particles can be prevented from being generated during de-electrification.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240705&DB=EPODOC&CC=KR&NR=20240104846A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240705&DB=EPODOC&CC=KR&NR=20240104846A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JIN CHANG HYUN</creatorcontrib><creatorcontrib>HWANG YOON JUNG</creatorcontrib><creatorcontrib>LEE CHUL</creatorcontrib><creatorcontrib>JO UNG HYUN</creatorcontrib><creatorcontrib>LEE SEONG DO</creatorcontrib><creatorcontrib>KIM JAE HYEON</creatorcontrib><creatorcontrib>PARK SO YEON</creatorcontrib><creatorcontrib>YI EUN SOO</creatorcontrib><creatorcontrib>LEE JUNG HEON</creatorcontrib><creatorcontrib>KIM KWAN HEE</creatorcontrib><title>WAFER DEPOSITION EQUIPMENT AND METHOD FOR DISCHARGING WAFER USING THE SAME</title><description>본 발명은 웨이퍼 증착 설비 및 이를 이용한 웨이퍼 제전 방법에 관한 것으로, 프로세스챔버의 샤워헤드에 관로를 매개로 연결되고, 상기 프로세스챔버의 외부에서 플라즈마를 생성하여 프로세스챔버로 플라즈마 가스를 공급하는 리모트플라즈마장치; 상기 리모트플라즈마장치에 관로를 매개로 연결되고, 상기 리모트플라즈마장치에 비활성가스를 공급하는 비활성가스공급원; 및 상기 리모트플라즈마장치의 작동을 제어하는 제어부;를 포함한다. 따라서, 웨이퍼를 손상없이 안전하게 제전하고 제전시 파티클의 발생을 방지할 수 있게 된다.
The present invention relates to a wafer deposition apparatus and a wafer de-energizing method using the same, comprising: a remote plasma device which is connected to a shower head of a process chamber through a pipeline and generates a plasma having a lower intensity than a plasma for deposition outside the process chamber, supplying the generated plasma gas to the inside of the process chamber; the inert gas supply source is connected to the remote plasma device through a pipeline and supplies inert gas to the remote plasma device; and a control unit for controlling the operation of the remote plasma device. Therefore, safe de-electrification is performed on the wafer without damage, and particles can be prevented from being generated during de-electrification.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAKd3RzDVJwcQ3wD_YM8fT3U3ANDPUM8HX1C1Fw9HNR8HUN8fB3UXDzB6rxDHb2cAxy9_RzV4DoCg0GsUM8XBWCHX1deRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJvHeQkYGRiYGhgYmFiZmjMXGqAAepLhY</recordid><startdate>20240705</startdate><enddate>20240705</enddate><creator>JIN CHANG HYUN</creator><creator>HWANG YOON JUNG</creator><creator>LEE CHUL</creator><creator>JO UNG HYUN</creator><creator>LEE SEONG DO</creator><creator>KIM JAE HYEON</creator><creator>PARK SO YEON</creator><creator>YI EUN SOO</creator><creator>LEE JUNG HEON</creator><creator>KIM KWAN HEE</creator><scope>EVB</scope></search><sort><creationdate>20240705</creationdate><title>WAFER DEPOSITION EQUIPMENT AND METHOD FOR DISCHARGING WAFER USING THE SAME</title><author>JIN CHANG HYUN ; HWANG YOON JUNG ; LEE CHUL ; JO UNG HYUN ; LEE SEONG DO ; KIM JAE HYEON ; PARK SO YEON ; YI EUN SOO ; LEE JUNG HEON ; KIM KWAN HEE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20240104846A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>JIN CHANG HYUN</creatorcontrib><creatorcontrib>HWANG YOON JUNG</creatorcontrib><creatorcontrib>LEE CHUL</creatorcontrib><creatorcontrib>JO UNG HYUN</creatorcontrib><creatorcontrib>LEE SEONG DO</creatorcontrib><creatorcontrib>KIM JAE HYEON</creatorcontrib><creatorcontrib>PARK SO YEON</creatorcontrib><creatorcontrib>YI EUN SOO</creatorcontrib><creatorcontrib>LEE JUNG HEON</creatorcontrib><creatorcontrib>KIM KWAN HEE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JIN CHANG HYUN</au><au>HWANG YOON JUNG</au><au>LEE CHUL</au><au>JO UNG HYUN</au><au>LEE SEONG DO</au><au>KIM JAE HYEON</au><au>PARK SO YEON</au><au>YI EUN SOO</au><au>LEE JUNG HEON</au><au>KIM KWAN HEE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>WAFER DEPOSITION EQUIPMENT AND METHOD FOR DISCHARGING WAFER USING THE SAME</title><date>2024-07-05</date><risdate>2024</risdate><abstract>본 발명은 웨이퍼 증착 설비 및 이를 이용한 웨이퍼 제전 방법에 관한 것으로, 프로세스챔버의 샤워헤드에 관로를 매개로 연결되고, 상기 프로세스챔버의 외부에서 플라즈마를 생성하여 프로세스챔버로 플라즈마 가스를 공급하는 리모트플라즈마장치; 상기 리모트플라즈마장치에 관로를 매개로 연결되고, 상기 리모트플라즈마장치에 비활성가스를 공급하는 비활성가스공급원; 및 상기 리모트플라즈마장치의 작동을 제어하는 제어부;를 포함한다. 따라서, 웨이퍼를 손상없이 안전하게 제전하고 제전시 파티클의 발생을 방지할 수 있게 된다.
The present invention relates to a wafer deposition apparatus and a wafer de-energizing method using the same, comprising: a remote plasma device which is connected to a shower head of a process chamber through a pipeline and generates a plasma having a lower intensity than a plasma for deposition outside the process chamber, supplying the generated plasma gas to the inside of the process chamber; the inert gas supply source is connected to the remote plasma device through a pipeline and supplies inert gas to the remote plasma device; and a control unit for controlling the operation of the remote plasma device. Therefore, safe de-electrification is performed on the wafer without damage, and particles can be prevented from being generated during de-electrification.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR20240104846A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | WAFER DEPOSITION EQUIPMENT AND METHOD FOR DISCHARGING WAFER USING THE SAME |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T14%3A15%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JIN%20CHANG%20HYUN&rft.date=2024-07-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20240104846A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |