스퍼터링 타깃, 그 제조 방법, 및 스퍼터링 타깃을 사용한 스퍼터링막의 제조 방법

스퍼터링 타깃은, 결정 입자를 포함하고, 비정질상의 함유율이 3 체적％ 이하이고, 크롬, 몰리브덴, 및 크롬-몰리브덴 합금으로 이루어지는 군에서 선택되는 적어도 1 종의 금속을 포함한다. A sputtering target includes crystal grains, has a content of an amorphous phase of 3% by volume or less, and contains at least one metal selected from the group consisting of chromium, molybdenu...

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Bibliographische Detailangaben
Hauptverfasser:	SHONO DAIKI, MESUDA MASAMI, ITOH KENICHI, KONDO TAIGA, HANAWA KOICHI
Format:	Patent
Sprache:	kor
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL METALLURGY PERFORMING OPERATIONS PUNCHING METAL ROLLING OF METAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Zusammenfassung:	스퍼터링 타깃은, 결정 입자를 포함하고, 비정질상의 함유율이 3 체적％ 이하이고, 크롬, 몰리브덴, 및 크롬-몰리브덴 합금으로 이루어지는 군에서 선택되는 적어도 1 종의 금속을 포함한다. A sputtering target includes crystal grains, has a content of an amorphous phase of 3% by volume or less, and contains at least one metal selected from the group consisting of chromium, molybdenum, and chromium-molybdenum alloys.