MATERIAL FOR METAL LINE IN SEMICONDUCTOR METAL LINE IN SEMICONDUCTOR AND DEVICE METHOD FOR FORMING METAL LINE IN SEMICONDUCTOR DEVICE

본 발명은 알루미늄을 주재료로 하고, 여기에 구리 및 원소 X를 포함하는 합금을 포함하고, 상기 원소 X는 1) 열팽창 계수(CTE; Coefficient of thermal expansion)가 0.55ppm/K보다 높고 5ppm/K보다 낮으며, 2) 녹는점(MP; Melting Point)이 3000℃보다 높고, 3) 전기음성도(electronegativity)가 2.2보다 큰, 반도체 소자의 금속배선 재료, 이를 포함하는 반도체 소자의 금속배선 및 상기 반도체 소자의 금속배선 형성방법에 대한 것이다. The described technology relates generally to a material for a metal line in a semiconductor device including an alloy including aluminum as a main material, copper, and an element X, wherein the element X has 1) a coefficient of thermal expansion (CTE) of greater than about 0.55 ppm/K and less than about 5 ppm/K, 2) a melting point (MP) of greater than about 3000° C., and 3) electronegativity of greater than about 2.2, a metal line in a semiconductor device including the alloy, and a method of forming a metal line in a semiconductor device.