Substrate processing apparatus

본 발명은 기판처리장치에 대한 것으로서, 보다 상세하게는 대면적 기판을 에칭(etching)하는 경우에 에칭량을 용이하게 조절 및 일정하게 유지할 수 있으며, 나아가 하나의 챔버에서 열처리까지 수행하여 효과적으로 대면적 기판의 에칭을 수행할 수 있는 기판처리장치에 대한 것이다. The present invention relates to a substrate processing apparatus, comprising: a chamber providing a processing space for a substrate; a substrate processing unit including at least one gas supply unit that supplies a first gas and a second gas toward the substrate and discharges a residual gas, and including at least one substrate etching unit that etches the substrate and removes by-products; and a substrate support unit that is provided in the processing space, mounts a substrate, and moves relative to the substrate processing unit, the gas supply unit being provided with: a first gas supply channel that supplies a first gas toward the substrate; a second gas supply channel that supplies a second gas that reacts with the first gas toward the substrate; the at least one first exhaust channel is arranged between the first gas supply channel and the second gas supply channel; and at least one purge gas supply channel provided around the first exhaust channel at the periphery of the first gas supply channel and the second gas supply channel.