β-Ga2O3/β-Ga2O3 적층체의 제조 방법

본 발명에 따르면, 용질인 Ga2O3 과, 용매인 PbO 및 Bi2O3 을 혼합하여 융해시킨 후, 얻어진 융액에, β-Ga2O3 기판을 직접 접촉시키고, 액상 에피택셜 성장법에 의해 β-Ga2O3 단결정을 상기 β-Ga2O3 기판 위에 성장시킴으로써 β-Ga2O3/β-Ga2O3 적층체를 얻는 β-Ga2O3/β-Ga2O3 적층체의 제조 방법을 제공할 수 있다. The present invention is able to provide a method for producing a β-Ga2O3/β-Ga2O3 multilayer body,...

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Bibliographische Detailangaben
Hauptverfasser:	SEKIWA HIDEYUKI, TADOKORO HIROAKI
Format:	Patent
Sprache:	kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	본 발명에 따르면, 용질인 Ga2O3 과, 용매인 PbO 및 Bi2O3 을 혼합하여 융해시킨 후, 얻어진 융액에, β-Ga2O3 기판을 직접 접촉시키고, 액상 에피택셜 성장법에 의해 β-Ga2O3 단결정을 상기 β-Ga2O3 기판 위에 성장시킴으로써 β-Ga2O3/β-Ga2O3 적층체를 얻는 β-Ga2O3/β-Ga2O3 적층체의 제조 방법을 제공할 수 있다. The present invention is able to provide a method for producing a β-Ga2O3/β-Ga2O3 multilayer body, wherein a β-Ga2O3/β-Ga2O3 multilayer body is obtained by mixing and melting Ga2O3, which serves as a solute, and PbO and Bi2O3, which serve as solvents, and subsequently bringing a β-Ga2O3 substrate into a direct contact with the thus-obtained melt, thereby growing a β-Ga2O3 single crystal on the β-Ga2O3 substrate by means of liquid-phase epitaxial growth.