2 Semiconductor device including two dimensional material and electronic apparatus includign the semiconductor device

2 Semiconductor device including two dimensional material and electronic apparatus includign the semiconductor device

2차원 물질을 포함하는 반도체 소자 및 이를 포함하는 전자 장치가 개시된다. 개시된 반도체 소자는 이차원 반도체 물질을 포함하는 채널층; 상기 채널층의 가운데 부분에 마련되는 게이트 절연층; 상기 게이트 절연층에 마련되는 게이트 전극; 및 상기 채널층의 양측 부분에 각각 접촉하도록 마련되는 제1 및 제2 도전층을 포함한다. 여기서, 제1 및 제2 도전층은 금속 붕화물을 포함한다. A semiconductor device may include a channel layer including a two-dimensional (2D) se...

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Hauptverfasser: KIM, CHANG HYUN, BYUN, KYUNG EUN, SHIN, KEUN WOOK, SEOL, MIN SU, LEE, EUN KYU, YOO, JOUNG EUN
Format: Patent
Sprache:eng ; kor
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KIM, CHANG HYUN
BYUN, KYUNG EUN
SHIN, KEUN WOOK
SEOL, MIN SU
LEE, EUN KYU
YOO, JOUNG EUN
description 2차원 물질을 포함하는 반도체 소자 및 이를 포함하는 전자 장치가 개시된다. 개시된 반도체 소자는 이차원 반도체 물질을 포함하는 채널층; 상기 채널층의 가운데 부분에 마련되는 게이트 절연층; 상기 게이트 절연층에 마련되는 게이트 전극; 및 상기 채널층의 양측 부분에 각각 접촉하도록 마련되는 제1 및 제2 도전층을 포함한다. 여기서, 제1 및 제2 도전층은 금속 붕화물을 포함한다. A semiconductor device may include a channel layer including a two-dimensional (2D) semiconductor material, a gate insulating layer on the channel layer, a gate electrode on the gate insulating layer, and a first conductive layer and a second conductive layer respectively on opposite sides of the channel layer. Each of the first and second conductive layers may include metal boride.
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ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title 2 Semiconductor device including two dimensional material and electronic apparatus includign the semiconductor device
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