Apparatus And Method For Fabricating Semiconductor
A semiconductor manufacturing apparatus according to one embodiment of the present invention includes: a chamber, which is a space in which a thin film is formed; and a hydrogen removal device installed in the chamber to remove residual hydrogen inside the chamber, wherein the hydrogen removal devic...
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| creator | KIM SANGHUN HUANG DEAN YUAN |
| description | A semiconductor manufacturing apparatus according to one embodiment of the present invention includes: a chamber, which is a space in which a thin film is formed; and a hydrogen removal device installed in the chamber to remove residual hydrogen inside the chamber, wherein the hydrogen removal device decomposes the residual hydrogen inside the chamber into electrons and hydrogen protons, and releases the decomposed electrons and hydrogen protons outside the chamber. A method for manufacturing a semiconductor according to one embodiment of the present invention comprises: a step in which a chemical reaction occurs inside the chamber in which the residual hydrogen is decomposed into electrons and hydrogen proton; and a step in which a chemical reaction occurs outside the chamber in which the decomposed electrons and hydrogen proton are combined.
본 발명의 일 실시예에 따른 반도체 제조 장치는 박막이 형성되는 공간인 챔버; 및 챔버에 설치되어 챔버 내부의 잔여 수소를 제거하는 수소 제거 장치;를 포함하고, 상기 수소 제거 장치는 챔버 내부의 잔여 수소를 전자와 수소 프로톤으로 분해하고, 분해한 전자 및 수소 프로톤을 챔버 외부로 방출하는 것을 특징으로 한다. 본 발명의 일 실시예에 따른 반도체 제조 방법은 챔버 내부에서 잔여 수소를 전자와 수소 프로톤으로 분해되는 화학 반응이 발생하는 단계; 및 챔버 외부에서 분해된 전자 및 수소 프로톤이 결합되는 화학 반응이 발생하는 단계;를 포함하는 것을 특징으로 한다. |
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본 발명의 일 실시예에 따른 반도체 제조 장치는 박막이 형성되는 공간인 챔버; 및 챔버에 설치되어 챔버 내부의 잔여 수소를 제거하는 수소 제거 장치;를 포함하고, 상기 수소 제거 장치는 챔버 내부의 잔여 수소를 전자와 수소 프로톤으로 분해하고, 분해한 전자 및 수소 프로톤을 챔버 외부로 방출하는 것을 특징으로 한다. 본 발명의 일 실시예에 따른 반도체 제조 방법은 챔버 내부에서 잔여 수소를 전자와 수소 프로톤으로 분해되는 화학 반응이 발생하는 단계; 및 챔버 외부에서 분해된 전자 및 수소 프로톤이 결합되는 화학 반응이 발생하는 단계;를 포함하는 것을 특징으로 한다.</description><language>eng ; kor</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240123&DB=EPODOC&CC=KR&NR=20240010207A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240123&DB=EPODOC&CC=KR&NR=20240010207A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM SANGHUN</creatorcontrib><creatorcontrib>HUANG DEAN YUAN</creatorcontrib><title>Apparatus And Method For Fabricating Semiconductor</title><description>A semiconductor manufacturing apparatus according to one embodiment of the present invention includes: a chamber, which is a space in which a thin film is formed; and a hydrogen removal device installed in the chamber to remove residual hydrogen inside the chamber, wherein the hydrogen removal device decomposes the residual hydrogen inside the chamber into electrons and hydrogen protons, and releases the decomposed electrons and hydrogen protons outside the chamber. A method for manufacturing a semiconductor according to one embodiment of the present invention comprises: a step in which a chemical reaction occurs inside the chamber in which the residual hydrogen is decomposed into electrons and hydrogen proton; and a step in which a chemical reaction occurs outside the chamber in which the decomposed electrons and hydrogen proton are combined.
본 발명의 일 실시예에 따른 반도체 제조 장치는 박막이 형성되는 공간인 챔버; 및 챔버에 설치되어 챔버 내부의 잔여 수소를 제거하는 수소 제거 장치;를 포함하고, 상기 수소 제거 장치는 챔버 내부의 잔여 수소를 전자와 수소 프로톤으로 분해하고, 분해한 전자 및 수소 프로톤을 챔버 외부로 방출하는 것을 특징으로 한다. 본 발명의 일 실시예에 따른 반도체 제조 방법은 챔버 내부에서 잔여 수소를 전자와 수소 프로톤으로 분해되는 화학 반응이 발생하는 단계; 및 챔버 외부에서 분해된 전자 및 수소 프로톤이 결합되는 화학 반응이 발생하는 단계;를 포함하는 것을 특징으로 한다.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDByLChILEosKS1WcMxLUfBNLcnIT1Fwyy9ScEtMKspMTizJzEtXCE7NzUzOz0spTS7JL-JhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGRiYGBoYGRgbmjsbEqQIARoksfg</recordid><startdate>20240123</startdate><enddate>20240123</enddate><creator>KIM SANGHUN</creator><creator>HUANG DEAN YUAN</creator><scope>EVB</scope></search><sort><creationdate>20240123</creationdate><title>Apparatus And Method For Fabricating Semiconductor</title><author>KIM SANGHUN ; HUANG DEAN YUAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20240010207A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2024</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM SANGHUN</creatorcontrib><creatorcontrib>HUANG DEAN YUAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM SANGHUN</au><au>HUANG DEAN YUAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Apparatus And Method For Fabricating Semiconductor</title><date>2024-01-23</date><risdate>2024</risdate><abstract>A semiconductor manufacturing apparatus according to one embodiment of the present invention includes: a chamber, which is a space in which a thin film is formed; and a hydrogen removal device installed in the chamber to remove residual hydrogen inside the chamber, wherein the hydrogen removal device decomposes the residual hydrogen inside the chamber into electrons and hydrogen protons, and releases the decomposed electrons and hydrogen protons outside the chamber. A method for manufacturing a semiconductor according to one embodiment of the present invention comprises: a step in which a chemical reaction occurs inside the chamber in which the residual hydrogen is decomposed into electrons and hydrogen proton; and a step in which a chemical reaction occurs outside the chamber in which the decomposed electrons and hydrogen proton are combined.
본 발명의 일 실시예에 따른 반도체 제조 장치는 박막이 형성되는 공간인 챔버; 및 챔버에 설치되어 챔버 내부의 잔여 수소를 제거하는 수소 제거 장치;를 포함하고, 상기 수소 제거 장치는 챔버 내부의 잔여 수소를 전자와 수소 프로톤으로 분해하고, 분해한 전자 및 수소 프로톤을 챔버 외부로 방출하는 것을 특징으로 한다. 본 발명의 일 실시예에 따른 반도체 제조 방법은 챔버 내부에서 잔여 수소를 전자와 수소 프로톤으로 분해되는 화학 반응이 발생하는 단계; 및 챔버 외부에서 분해된 전자 및 수소 프로톤이 결합되는 화학 반응이 발생하는 단계;를 포함하는 것을 특징으로 한다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Apparatus And Method For Fabricating Semiconductor |
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