METHODS AND SYSTEMS FOR FORMING DIPOLE LAYERS IN STACKED GATE-ALL-AROUND TRANSISTORS

Methods and related systems for forming structures are disclosed. Implementations of the presently described method include the steps of using a sacrificial gap fill fluid to selectively form a first layer on the one or more first surfaces at the bottom of the gap, and forming a second layer on the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LUKOSE LEO, RAMACHANDRAN RANJITH KARUPARAMBIL, HOMKAR SUVIDYAKUMAR VINOD, SIPPOLA PERTTU, BOTTIGLIERI LORENZO, ILLIBERI ANDREA, GIVENS MICHAEL, LEONHARDT ALESSANDRA, DEZELAH CHARLES, IVANOVA TATIANA, SURMAN MATTHEW, MOOTHERI VIVEK KOLADI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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