INTEGRATED CIRCUIT DEVICES INCLUDING METAL STRUCTURES HAVING A CURVED INTERFACE AND METHODS OF FORMING THE SAME

A method for forming an integrated circuit device according to embodiments includes the steps of providing an underlying structure including a substrate and a first insulating layer and forming a first metal structure, a first adhesion pattern, and a second insulating layer on the first insulating l...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HONG WON HYUK, LEE JANG GEUN, CHOI JAE MYUNG, SEO KANG ILL
Format: Patent
Sprache:eng ; kor
Schlagworte:
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