Precursor compound for forming a metal film and a metal film using the same

The present invention relates to a precursor compound for forming a metal film containing molybdenum and a metal film using the same that has excellent reactivity with a substrate or reaction gas, has high volatility, and can form a metal thin film with low impurity content over a wide temperature r...

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Bibliographische Detailangaben
Hauptverfasser:	LEE JAE WOO, KIM PIL SOO, YUN HA KYUNG, LEE HAN JIN, YEO SO JEONG, KIM JUN YOUNG, BOK CHEOL KYU, SIM JANG KEUN, KIM JAE HYUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a precursor compound for forming a metal film containing molybdenum and a metal film using the same that has excellent reactivity with a substrate or reaction gas, has high volatility, and can form a metal thin film with low impurity content over a wide temperature range, especially at low temperatures. 본 발명은 기판 또는 반응 가스와의 반응성이 우수하고, 높은 휘발성을 가지며, 넓은 온도 구간, 특히 저온에서도, 불순물 함량이 낮은 금속 박막을 형성할 수 있는 몰리브덴을 포함한 금속막 형성용 전구체 화합물 및 이를 이용한 금속막에 관한 것이다.