이미징 계측을 이용한 공간 패턴 부하 측정
방법은 기판의 제1 영역의 제1 구조 데이터를 식별하는 단계 및 처리 챔버에서의 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 광학 계측 데이터를 수신하는 단계를 포함한다. 방법은, 광학 계측 데이터 및 제1 구조 데이터에 기초하여, 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 제1 영역의 제1 성장 속도를 결정하는 단계를 더 포함한다. 방법은, 광학 계측 데이터 및 제1 성장 속도에 기초하여, 제2 영역의 제2 구조 데이터 없이 기판의 제2 영역의 두께 데이터를 예측하는 단계를 더 포함한다. A method includes...
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creator | VOLETI VENKATAKAUSHIK NG ERIC CHIN HONG EGAN TODD JONATHAN BUDIARTO EDWARD WIBOWO VAEZ IRAVANI MEHDI |
description | 방법은 기판의 제1 영역의 제1 구조 데이터를 식별하는 단계 및 처리 챔버에서의 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 광학 계측 데이터를 수신하는 단계를 포함한다. 방법은, 광학 계측 데이터 및 제1 구조 데이터에 기초하여, 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 제1 영역의 제1 성장 속도를 결정하는 단계를 더 포함한다. 방법은, 광학 계측 데이터 및 제1 성장 속도에 기초하여, 제2 영역의 제2 구조 데이터 없이 기판의 제2 영역의 두께 데이터를 예측하는 단계를 더 포함한다.
A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20230156409A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20230156409A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20230156409A3</originalsourceid><addsrcrecordid>eNrjZLB8M3fL6_U73iyfqvBqc8ubHQvfzG1RAIq9mbXy7dQ5QLGtrza0KLztWfG2ZYvC620Nb6fOUACpWjCVh4E1LTGnOJUXSnMzKLu5hjh76KYW5MenFhckJqfmpZbEewcZGRgZGxiampkYWDoaE6cKAMAYP8c</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>이미징 계측을 이용한 공간 패턴 부하 측정</title><source>esp@cenet</source><creator>VOLETI VENKATAKAUSHIK ; NG ERIC CHIN HONG ; EGAN TODD JONATHAN ; BUDIARTO EDWARD WIBOWO ; VAEZ IRAVANI MEHDI</creator><creatorcontrib>VOLETI VENKATAKAUSHIK ; NG ERIC CHIN HONG ; EGAN TODD JONATHAN ; BUDIARTO EDWARD WIBOWO ; VAEZ IRAVANI MEHDI</creatorcontrib><description>방법은 기판의 제1 영역의 제1 구조 데이터를 식별하는 단계 및 처리 챔버에서의 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 광학 계측 데이터를 수신하는 단계를 포함한다. 방법은, 광학 계측 데이터 및 제1 구조 데이터에 기초하여, 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 제1 영역의 제1 성장 속도를 결정하는 단계를 더 포함한다. 방법은, 광학 계측 데이터 및 제1 성장 속도에 기초하여, 제2 영역의 제2 구조 데이터 없이 기판의 제2 영역의 두께 데이터를 예측하는 단계를 더 포함한다.
A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.</description><language>kor</language><subject>BASIC ELECTRIC ELEMENTS ; CALCULATING ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS ; COMPUTING ; COUNTING ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; METALLURGY ; PHYSICS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TESTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231114&DB=EPODOC&CC=KR&NR=20230156409A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231114&DB=EPODOC&CC=KR&NR=20230156409A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VOLETI VENKATAKAUSHIK</creatorcontrib><creatorcontrib>NG ERIC CHIN HONG</creatorcontrib><creatorcontrib>EGAN TODD JONATHAN</creatorcontrib><creatorcontrib>BUDIARTO EDWARD WIBOWO</creatorcontrib><creatorcontrib>VAEZ IRAVANI MEHDI</creatorcontrib><title>이미징 계측을 이용한 공간 패턴 부하 측정</title><description>방법은 기판의 제1 영역의 제1 구조 데이터를 식별하는 단계 및 처리 챔버에서의 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 광학 계측 데이터를 수신하는 단계를 포함한다. 방법은, 광학 계측 데이터 및 제1 구조 데이터에 기초하여, 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 제1 영역의 제1 성장 속도를 결정하는 단계를 더 포함한다. 방법은, 광학 계측 데이터 및 제1 성장 속도에 기초하여, 제2 영역의 제2 구조 데이터 없이 기판의 제2 영역의 두께 데이터를 예측하는 단계를 더 포함한다.
A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CALCULATING</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB8M3fL6_U73iyfqvBqc8ubHQvfzG1RAIq9mbXy7dQ5QLGtrza0KLztWfG2ZYvC620Nb6fOUACpWjCVh4E1LTGnOJUXSnMzKLu5hjh76KYW5MenFhckJqfmpZbEewcZGRgZGxiampkYWDoaE6cKAMAYP8c</recordid><startdate>20231114</startdate><enddate>20231114</enddate><creator>VOLETI VENKATAKAUSHIK</creator><creator>NG ERIC CHIN HONG</creator><creator>EGAN TODD JONATHAN</creator><creator>BUDIARTO EDWARD WIBOWO</creator><creator>VAEZ IRAVANI MEHDI</creator><scope>EVB</scope></search><sort><creationdate>20231114</creationdate><title>이미징 계측을 이용한 공간 패턴 부하 측정</title><author>VOLETI VENKATAKAUSHIK ; NG ERIC CHIN HONG ; EGAN TODD JONATHAN ; BUDIARTO EDWARD WIBOWO ; VAEZ IRAVANI MEHDI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230156409A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CALCULATING</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>VOLETI VENKATAKAUSHIK</creatorcontrib><creatorcontrib>NG ERIC CHIN HONG</creatorcontrib><creatorcontrib>EGAN TODD JONATHAN</creatorcontrib><creatorcontrib>BUDIARTO EDWARD WIBOWO</creatorcontrib><creatorcontrib>VAEZ IRAVANI MEHDI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VOLETI VENKATAKAUSHIK</au><au>NG ERIC CHIN HONG</au><au>EGAN TODD JONATHAN</au><au>BUDIARTO EDWARD WIBOWO</au><au>VAEZ IRAVANI MEHDI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>이미징 계측을 이용한 공간 패턴 부하 측정</title><date>2023-11-14</date><risdate>2023</risdate><abstract>방법은 기판의 제1 영역의 제1 구조 데이터를 식별하는 단계 및 처리 챔버에서의 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 광학 계측 데이터를 수신하는 단계를 포함한다. 방법은, 광학 계측 데이터 및 제1 구조 데이터에 기초하여, 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 제1 영역의 제1 성장 속도를 결정하는 단계를 더 포함한다. 방법은, 광학 계측 데이터 및 제1 성장 속도에 기초하여, 제2 영역의 제2 구조 데이터 없이 기판의 제2 영역의 두께 데이터를 예측하는 단계를 더 포함한다.
A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CALCULATING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING COUNTING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING |
title | 이미징 계측을 이용한 공간 패턴 부하 측정 |
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