이미징 계측을 이용한 공간 패턴 부하 측정

방법은 기판의 제1 영역의 제1 구조 데이터를 식별하는 단계 및 처리 챔버에서의 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 광학 계측 데이터를 수신하는 단계를 포함한다. 방법은, 광학 계측 데이터 및 제1 구조 데이터에 기초하여, 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 제1 영역의 제1 성장 속도를 결정하는 단계를 더 포함한다. 방법은, 광학 계측 데이터 및 제1 성장 속도에 기초하여, 제2 영역의 제2 구조 데이터 없이 기판의 제2 영역의 두께 데이터를 예측하는 단계를 더 포함한다. A method includes...

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Hauptverfasser: VOLETI VENKATAKAUSHIK, NG ERIC CHIN HONG, EGAN TODD JONATHAN, BUDIARTO EDWARD WIBOWO, VAEZ IRAVANI MEHDI
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creator VOLETI VENKATAKAUSHIK
NG ERIC CHIN HONG
EGAN TODD JONATHAN
BUDIARTO EDWARD WIBOWO
VAEZ IRAVANI MEHDI
description 방법은 기판의 제1 영역의 제1 구조 데이터를 식별하는 단계 및 처리 챔버에서의 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 광학 계측 데이터를 수신하는 단계를 포함한다. 방법은, 광학 계측 데이터 및 제1 구조 데이터에 기초하여, 하나 이상의 기판 퇴적 프로세스와 연관된 기판의 제1 영역의 제1 성장 속도를 결정하는 단계를 더 포함한다. 방법은, 광학 계측 데이터 및 제1 성장 속도에 기초하여, 제2 영역의 제2 구조 데이터 없이 기판의 제2 영역의 두께 데이터를 예측하는 단계를 더 포함한다. A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.
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A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. 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A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. 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A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CALCULATING
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
METALLURGY
PHYSICS
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TESTING
title 이미징 계측을 이용한 공간 패턴 부하 측정
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