MICRO LIGHT EMITTING DIODE STRUCTURE AND MICRO LIGHT EMITTING DIODE DISPLAY DEVICE

Provided is a micro light emitting diode structure including an epitaxial structure, an electrode layer, and a barrier layer. The epitaxial structure has a surface. The electrode layer is disposed on a surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. An ortho...

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Bibliographische Detailangaben
Hauptverfasser:	TZU YANG LIN, WAN JUNG PENG, PAI YANG TSAI, FEI HONG CHEN, YOU LIN PENG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Provided is a micro light emitting diode structure including an epitaxial structure, an electrode layer, and a barrier layer. The epitaxial structure has a surface. The electrode layer is disposed on a surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. An orthogonal projection area of the barrier layer on the epitaxial structure is larger than and covers an orthogonal projection area of the electrode layer on the epitaxial structure. 에피택셜 구조, 전극층 및 배리어층을 포함하는 마이크로 발광 다이오드 구조가 제공된다. 에피택셜 구조는 표면을 갖는다. 전극층은 에피택셜 구조의 표면 상에 배치된다. 배리어층은 전극층 상에 배치된다. 에피택셜 구조 상의 배리어층의 직교 투영 면적은 에피택셜 구조 상의 전극층의 직교 투영 면적보다 크고 이를 덮는다.