SYSTEMS AND METHODS FOR CONTROLLING VAPOR PHASE PROCESSING
A semiconductor processing device can include a reactor assembly including a reaction chamber sized to receive a substrate therein. An exhaust line is in fluid communication with the reaction chamber and is configured to deliver gases out of the reaction chamber. A valve may be disposed along the ex...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LI CHEUK SCHULTZ MICHAEL F WINKLER JERELD LEE SHUGRUE JOHN KEVIN |
| description | A semiconductor processing device can include a reactor assembly including a reaction chamber sized to receive a substrate therein. An exhaust line is in fluid communication with the reaction chamber and is configured to deliver gases out of the reaction chamber. A valve may be disposed along the exhaust line to regulate the flow of gases along the exhaust line. The control system may be configured to operate in an open loop control mode to control the operation of the valve. Thus, the present invention can ensure high membrane quality and efficiency for time and consumption of reactants.
반도체 처리 장치는 기판을 내부에 수용하도록 크기를 갖는 반응 챔버를 포함하는 반응기 어셈블리를 포함할 수 있다. 배기 라인은 반응 챔버와 유체 연통하고, 반응 챔버 밖으로 가스를 전달하도록 구성된다. 밸브는 배기 라인을 따라 가스의 흐름을 조절하도록 배기 라인을 따라 배치될 수 있다. 제어 시스템은 밸브의 작동을 제어하기 위해 개방 루프 제어 모드에서 작동하도록 구성될 수 있다. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20230144993A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20230144993A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20230144993A3</originalsourceid><addsrcrecordid>eNrjZLAKjgwOcfUNVnD0c1HwdQ3x8HcJVnDzD1Jw9vcLCfL38fH0c1cIcwwAigR4OAa7KgQE-Tu7BgcDhXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBkbGBoYmJpaWxozFxqgB4Gyou</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SYSTEMS AND METHODS FOR CONTROLLING VAPOR PHASE PROCESSING</title><source>esp@cenet</source><creator>LI CHEUK ; SCHULTZ MICHAEL F ; WINKLER JERELD LEE ; SHUGRUE JOHN KEVIN</creator><creatorcontrib>LI CHEUK ; SCHULTZ MICHAEL F ; WINKLER JERELD LEE ; SHUGRUE JOHN KEVIN</creatorcontrib><description>A semiconductor processing device can include a reactor assembly including a reaction chamber sized to receive a substrate therein. An exhaust line is in fluid communication with the reaction chamber and is configured to deliver gases out of the reaction chamber. A valve may be disposed along the exhaust line to regulate the flow of gases along the exhaust line. The control system may be configured to operate in an open loop control mode to control the operation of the valve. Thus, the present invention can ensure high membrane quality and efficiency for time and consumption of reactants.
반도체 처리 장치는 기판을 내부에 수용하도록 크기를 갖는 반응 챔버를 포함하는 반응기 어셈블리를 포함할 수 있다. 배기 라인은 반응 챔버와 유체 연통하고, 반응 챔버 밖으로 가스를 전달하도록 구성된다. 밸브는 배기 라인을 따라 가스의 흐름을 조절하도록 배기 라인을 따라 배치될 수 있다. 제어 시스템은 밸브의 작동을 제어하기 위해 개방 루프 제어 모드에서 작동하도록 구성될 수 있다.</description><language>eng ; kor</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231017&DB=EPODOC&CC=KR&NR=20230144993A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231017&DB=EPODOC&CC=KR&NR=20230144993A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI CHEUK</creatorcontrib><creatorcontrib>SCHULTZ MICHAEL F</creatorcontrib><creatorcontrib>WINKLER JERELD LEE</creatorcontrib><creatorcontrib>SHUGRUE JOHN KEVIN</creatorcontrib><title>SYSTEMS AND METHODS FOR CONTROLLING VAPOR PHASE PROCESSING</title><description>A semiconductor processing device can include a reactor assembly including a reaction chamber sized to receive a substrate therein. An exhaust line is in fluid communication with the reaction chamber and is configured to deliver gases out of the reaction chamber. A valve may be disposed along the exhaust line to regulate the flow of gases along the exhaust line. The control system may be configured to operate in an open loop control mode to control the operation of the valve. Thus, the present invention can ensure high membrane quality and efficiency for time and consumption of reactants.
반도체 처리 장치는 기판을 내부에 수용하도록 크기를 갖는 반응 챔버를 포함하는 반응기 어셈블리를 포함할 수 있다. 배기 라인은 반응 챔버와 유체 연통하고, 반응 챔버 밖으로 가스를 전달하도록 구성된다. 밸브는 배기 라인을 따라 가스의 흐름을 조절하도록 배기 라인을 따라 배치될 수 있다. 제어 시스템은 밸브의 작동을 제어하기 위해 개방 루프 제어 모드에서 작동하도록 구성될 수 있다.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAKjgwOcfUNVnD0c1HwdQ3x8HcJVnDzD1Jw9vcLCfL38fH0c1cIcwwAigR4OAa7KgQE-Tu7BgcDhXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBkbGBoYmJpaWxozFxqgB4Gyou</recordid><startdate>20231017</startdate><enddate>20231017</enddate><creator>LI CHEUK</creator><creator>SCHULTZ MICHAEL F</creator><creator>WINKLER JERELD LEE</creator><creator>SHUGRUE JOHN KEVIN</creator><scope>EVB</scope></search><sort><creationdate>20231017</creationdate><title>SYSTEMS AND METHODS FOR CONTROLLING VAPOR PHASE PROCESSING</title><author>LI CHEUK ; SCHULTZ MICHAEL F ; WINKLER JERELD LEE ; SHUGRUE JOHN KEVIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230144993A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2023</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LI CHEUK</creatorcontrib><creatorcontrib>SCHULTZ MICHAEL F</creatorcontrib><creatorcontrib>WINKLER JERELD LEE</creatorcontrib><creatorcontrib>SHUGRUE JOHN KEVIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LI CHEUK</au><au>SCHULTZ MICHAEL F</au><au>WINKLER JERELD LEE</au><au>SHUGRUE JOHN KEVIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SYSTEMS AND METHODS FOR CONTROLLING VAPOR PHASE PROCESSING</title><date>2023-10-17</date><risdate>2023</risdate><abstract>A semiconductor processing device can include a reactor assembly including a reaction chamber sized to receive a substrate therein. An exhaust line is in fluid communication with the reaction chamber and is configured to deliver gases out of the reaction chamber. A valve may be disposed along the exhaust line to regulate the flow of gases along the exhaust line. The control system may be configured to operate in an open loop control mode to control the operation of the valve. Thus, the present invention can ensure high membrane quality and efficiency for time and consumption of reactants.
반도체 처리 장치는 기판을 내부에 수용하도록 크기를 갖는 반응 챔버를 포함하는 반응기 어셈블리를 포함할 수 있다. 배기 라인은 반응 챔버와 유체 연통하고, 반응 챔버 밖으로 가스를 전달하도록 구성된다. 밸브는 배기 라인을 따라 가스의 흐름을 조절하도록 배기 라인을 따라 배치될 수 있다. 제어 시스템은 밸브의 작동을 제어하기 위해 개방 루프 제어 모드에서 작동하도록 구성될 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR20230144993A |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SYSTEMS AND METHODS FOR CONTROLLING VAPOR PHASE PROCESSING |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-05T20%3A07%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LI%20CHEUK&rft.date=2023-10-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20230144993A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |