PROCESS MONITORING SYSTEM FOR PLASMA APPARATUS

A process monitoring system for a plasma device according to one embodiment of the present invention comprises: a light sensor array that detects a transmissive light signal and a transmissive background signal among emission signals emitted from a plasma device that generates plasma; and a signal p...

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Bibliographische Detailangaben
Hauptverfasser:	KIM KWANGSEOP, KANG WOO SEOK, LIM MIKYUNG, LEE JINYOENG, KIM HYEON DON, KWEUN MINWOO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY TESTING
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Beschreibung
Zusammenfassung:	A process monitoring system for a plasma device according to one embodiment of the present invention comprises: a light sensor array that detects a transmissive light signal and a transmissive background signal among emission signals emitted from a plasma device that generates plasma; and a signal processing part connected to the light sensor array, and calculating the transmissive light signal and the transmissive background signal to measure only an intensity of the transmissive light signal. Therefore, the present invention enables process monitoring having long-term reproducibility. 본 발명의 일 실시예에 따른 플라즈마 장치용 공정 모니터링 시스템은 플라즈마를 발생시키는 플라즈마 장치에서 방출되는 방출 신호 중 투과 광신호 및 투과 배경신호를 검출하는 광 센서 어레이; 그리고 상기 광 센서 어레이에 연결되며, 상기 투과 광신호와 상기 투과 배경신호를 연산하여 상기 투과 광신호의 세기만을 측정하는 신호 처리부를 포함한다.