LOW VOLUME SHOWERHEAD WITH POROUS BAFFLE

Provided is a showerhead in a semiconductor processing device that can include a porous baffle to improve flow uniformity and purge time during atomic layer deposition. The showerhead comprises: a plenum volume; one or more gas inlet parts in fluid communication with the plenum volume; a face plate...

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Bibliographische Detailangaben
Hauptverfasser:	CHANDRASEKHARAN RAMESH, KANG HU, SANGPLUNG SAANGRUT, PASQUALE FRANK, SWAMINATHAN SHANKAR, LAVOIE ADRIEN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Provided is a showerhead in a semiconductor processing device that can include a porous baffle to improve flow uniformity and purge time during atomic layer deposition. The showerhead comprises: a plenum volume; one or more gas inlet parts in fluid communication with the plenum volume; a face plate including a plurality of first through-holes for distributing gas onto a substrate in a semiconductor processing device; and a porous baffle located in the area between the plenum volume and one or more gas inlet parts. The one or more gas inlet parts may include a stem with a small volume to improve purge time. The baffle may be porous and positioned between the stem and plenum volume to improve flow uniformity and suppress jetting. 반도체 프로세싱 장치 내의 샤워헤드는 원자 층 증착 동안에 흐름 균일도 및 퍼지 시간을 개선하기 위해서 다공성 베플을 포함할 수 있다. 이 샤워헤드는 플레넘 볼륨, 플레넘 볼륨과 유체적으로 연통하는 하나 이상의 가스 유입부들, 반도체 프로세싱 장치 내의 기판 상으로 가스를 분배하기 위한 복수의 제 1 관통-홀들을 포함하는 대면플레이트, 및 플레넘 볼륨과 하나 이상의 가스 유입부들 간의 영역에 위치한 다공성 베플을 포함한다. 하나 이상의 가스 유입부들은 퍼지 시간을 개선하기 위해서 작은 볼륨을 갖는 스템을 포함할 수 있다. 베플은 흐름 균일도를 개선하고 분사 (jetting) 를 억제하기 위해서 다공성이며 스템과 플레넘 볼륨 간에 위치할 수 있다.