TEMPERATURE CONTROL SYSTEM FOR LIQUID SOURCES

A reactor system for use in semiconductor processing utilizes a liquid source for deposition that needs to be maintained within a specific temperature control band or range. The reactor system includes a temperature control system including heating and cooling devices that heat and cool a vessel sto...

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Bibliographische Detailangaben
Hauptverfasser:	BIYANI SUDHANSHU, SHARMA PAWAN, KIMTEE ANKIT
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A reactor system for use in semiconductor processing utilizes a liquid source for deposition that needs to be maintained within a specific temperature control band or range. The reactor system includes a temperature control system including heating and cooling devices that heat and cool a vessel storing the liquid source to maintain the liquid source within a desired temperature control band or range. In this way, heating and cooling devices can be used in reactor systems that need to cool vessels, heat vessels, or use simultaneous or alternating heating and cooling to provide improved control of source temperature within a specific temperature control band. 반도체 처리에서 사용하기 위한 반응기 시스템은, 특정 온도 제어 밴드 또는 범위 내에서 유지될 필요가 있는 증착용 액체 공급원을 사용한다. 반응기 시스템은, 액체 공급원을 원하는 온도 제어 밴드 또는 범위 내에서 유지하기 위해 액체 공급원을 저장하는 용기를 가열 및 냉각하는 가열 및 냉각 장치를 포함한 온도 제어 시스템을 포함한다. 이러한 방식으로, 가열 및 냉각 장치는, 특정 온도 제어 밴드 내에서 공급원 온도의 향상된 제어를 제공하기 위해 용기를 냉각시키거나, 가열할 필요가 있거나, 동시 또는 교대 가열과 냉각을 사용할 필요가 있는 반응기 시스템에 사용될 수 있다.