MOS Low voltage ultraviolet emitting device based on metal oxide semiconductor structure and the Manufacturing Method
The present invention relates to a low voltage ultraviolet emitting device based on metal oxide semiconductor structure that realizes effective ultraviolet light emission by applying a phosphor layer that emits light in the UV-A and UV-B regions and an electrode layer that can transmit ultraviolet l...
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| creator | KIM JONGSU LEE JUKYOUNG MOHAMMAD M. AFANDI RYU JONGHO PARK JEHONG KANG TAEWOOK |
| description | The present invention relates to a low voltage ultraviolet emitting device based on metal oxide semiconductor structure that realizes effective ultraviolet light emission by applying a phosphor layer that emits light in the UV-A and UV-B regions and an electrode layer that can transmit ultraviolet light, and a manufacturing method. The device includes a substrate; a light emitting layer formed on the oxide film of the substrate based on zinc gallium oxide and emitting surface light; a lower electrode layer formed on the lower part of the substrate; and an upper electrode layer formed on top of the light emitting layer. It emits low-voltage ultraviolet surface light based on a metal-oxide-semiconductor (MOS) structure.
본 발명은 UV-A, UV-B 영역에서 발광하는 형광체층과 자외선을 투과할 수 있는 전극층을 적용하여 효과적인 자외선발광을 구현하는 저전압 MOS 구조 자외선 면발광 소자 및 이의 제조 방법에 관한 것으로, 기판;기판의 산화막상에 징크갈륨옥사이드 기반으로 형성되어 면발광하는 발광층;기판의 하부에 형성되는 하부 전극층; 및, 발광층 상부에 형성되는 상부 전극층;을 포함하는 금속-산화물-반도체(MOS) 구조를 기반으로 하여 저전압 자외선 면발광을 하는 것이다. |
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본 발명은 UV-A, UV-B 영역에서 발광하는 형광체층과 자외선을 투과할 수 있는 전극층을 적용하여 효과적인 자외선발광을 구현하는 저전압 MOS 구조 자외선 면발광 소자 및 이의 제조 방법에 관한 것으로, 기판;기판의 산화막상에 징크갈륨옥사이드 기반으로 형성되어 면발광하는 발광층;기판의 하부에 형성되는 하부 전극층; 및, 발광층 상부에 형성되는 상부 전극층;을 포함하는 금속-산화물-반도체(MOS) 구조를 기반으로 하여 저전압 자외선 면발광을 하는 것이다.</description><language>eng ; kor</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230901&DB=EPODOC&CC=KR&NR=20230127680A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230901&DB=EPODOC&CC=KR&NR=20230127680A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM JONGSU</creatorcontrib><creatorcontrib>LEE JUKYOUNG</creatorcontrib><creatorcontrib>MOHAMMAD M. AFANDI</creatorcontrib><creatorcontrib>RYU JONGHO</creatorcontrib><creatorcontrib>PARK JEHONG</creatorcontrib><creatorcontrib>KANG TAEWOOK</creatorcontrib><title>MOS Low voltage ultraviolet emitting device based on metal oxide semiconductor structure and the Manufacturing Method</title><description>The present invention relates to a low voltage ultraviolet emitting device based on metal oxide semiconductor structure that realizes effective ultraviolet light emission by applying a phosphor layer that emits light in the UV-A and UV-B regions and an electrode layer that can transmit ultraviolet light, and a manufacturing method. The device includes a substrate; a light emitting layer formed on the oxide film of the substrate based on zinc gallium oxide and emitting surface light; a lower electrode layer formed on the lower part of the substrate; and an upper electrode layer formed on top of the light emitting layer. It emits low-voltage ultraviolet surface light based on a metal-oxide-semiconductor (MOS) structure.
본 발명은 UV-A, UV-B 영역에서 발광하는 형광체층과 자외선을 투과할 수 있는 전극층을 적용하여 효과적인 자외선발광을 구현하는 저전압 MOS 구조 자외선 면발광 소자 및 이의 제조 방법에 관한 것으로, 기판;기판의 산화막상에 징크갈륨옥사이드 기반으로 형성되어 면발광하는 발광층;기판의 하부에 형성되는 하부 전극층; 및, 발광층 상부에 형성되는 상부 전극층;을 포함하는 금속-산화물-반도체(MOS) 구조를 기반으로 하여 저전압 자외선 면발광을 하는 것이다.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjEEKwjAQRbtxIeodBlwLtQV1K6IIWgR1X8Zk2gbSTEkm1ePbggdw9R-Px58msbg94Mpv6NkK1gTRisfesCUBao2IcTVo6o0ieGEgDeygJUEL_DGaIAyVYqejEvYQxA8QPQE6DdIQFOhihaMbnwqShvU8mVRoAy1-O0uWp-PzcF5RxyWFDhU5kvJyz9IsT9fZdrNL9_l_1Rf8Y0ZW</recordid><startdate>20230901</startdate><enddate>20230901</enddate><creator>KIM JONGSU</creator><creator>LEE JUKYOUNG</creator><creator>MOHAMMAD M. AFANDI</creator><creator>RYU JONGHO</creator><creator>PARK JEHONG</creator><creator>KANG TAEWOOK</creator><scope>EVB</scope></search><sort><creationdate>20230901</creationdate><title>MOS Low voltage ultraviolet emitting device based on metal oxide semiconductor structure and the Manufacturing Method</title><author>KIM JONGSU ; LEE JUKYOUNG ; MOHAMMAD M. AFANDI ; RYU JONGHO ; PARK JEHONG ; KANG TAEWOOK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230127680A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2023</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM JONGSU</creatorcontrib><creatorcontrib>LEE JUKYOUNG</creatorcontrib><creatorcontrib>MOHAMMAD M. AFANDI</creatorcontrib><creatorcontrib>RYU JONGHO</creatorcontrib><creatorcontrib>PARK JEHONG</creatorcontrib><creatorcontrib>KANG TAEWOOK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM JONGSU</au><au>LEE JUKYOUNG</au><au>MOHAMMAD M. AFANDI</au><au>RYU JONGHO</au><au>PARK JEHONG</au><au>KANG TAEWOOK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MOS Low voltage ultraviolet emitting device based on metal oxide semiconductor structure and the Manufacturing Method</title><date>2023-09-01</date><risdate>2023</risdate><abstract>The present invention relates to a low voltage ultraviolet emitting device based on metal oxide semiconductor structure that realizes effective ultraviolet light emission by applying a phosphor layer that emits light in the UV-A and UV-B regions and an electrode layer that can transmit ultraviolet light, and a manufacturing method. The device includes a substrate; a light emitting layer formed on the oxide film of the substrate based on zinc gallium oxide and emitting surface light; a lower electrode layer formed on the lower part of the substrate; and an upper electrode layer formed on top of the light emitting layer. It emits low-voltage ultraviolet surface light based on a metal-oxide-semiconductor (MOS) structure.
본 발명은 UV-A, UV-B 영역에서 발광하는 형광체층과 자외선을 투과할 수 있는 전극층을 적용하여 효과적인 자외선발광을 구현하는 저전압 MOS 구조 자외선 면발광 소자 및 이의 제조 방법에 관한 것으로, 기판;기판의 산화막상에 징크갈륨옥사이드 기반으로 형성되어 면발광하는 발광층;기판의 하부에 형성되는 하부 전극층; 및, 발광층 상부에 형성되는 상부 전극층;을 포함하는 금속-산화물-반도체(MOS) 구조를 기반으로 하여 저전압 자외선 면발광을 하는 것이다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES |
| title | MOS Low voltage ultraviolet emitting device based on metal oxide semiconductor structure and the Manufacturing Method |
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