DEPOSITION METHOD USING PLASMA
The present invention relates to a deposition method using plasma, which comprises: a first step to generate plasma while supplying N_2, Ar, and H_2 gases to a plasma apparatus, and supply the plasma to an active region; a second step to supply a solution with a platinum-based metal-containing compo...
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| creator | LEE MYEONGJI BAE KIE HWA JU JINHOON |
| description | The present invention relates to a deposition method using plasma, which comprises: a first step to generate plasma while supplying N_2, Ar, and H_2 gases to a plasma apparatus, and supply the plasma to an active region; a second step to supply a solution with a platinum-based metal-containing compound solution and a conductive material dispersed or a solution with a platinum-based metal-containing compound solution and an insulation material dispersed to the active region along with carrier gas of N_2 and H_2; a third step to gasify the solution with a platinum-based metal-containing compound solution and a conductive material dispersed or the solution with a platinum-based metal-containing compound solution and an insulation material dispersed, which is supplied to the active region, by plasma, and generate radicals to activate the same; and a fourth step to spray deposit the activated platinum-based metal-containing compound and the conductive material or the platinum-based metal-containing compound with the insulation material, which is activated, onto a substrate. In the processes of the third step and later, the platinum-based metal-containing compound is reduced in the activated status and is deposited on a surface of a substrate. Therefore, the deposition can be conducted within a short period of time.
본 발명은 플라즈마를 이용한 증착방법으로서, 플라즈마 장치에 N2, Ar,H2 가스를 공급시키면서 플라즈마를 발생시켜 활성영역으로 공급시키는 제 1 단계; 백금계 금속 함유 화합물 용액과 전도물질이 분산된 용액, 또는 백금계 금속 함유 화합물 용액 및 절연물질이 분산된 용액을 N2와 H2의 캐리어 가스와 함께 활성영역으로 공급하는 제 2 단계; 활성영역에 공급된 백금계 금속 함유 화합물 용액과 전도물질이 분산된 용액, 또는 백금계 금속 함유 화합물 용액 및 절연물질이 분산된 용액을 플라즈마에 의해 기화시키고 라디칼을 발생시켜 활성화시키는 제 3 단계; 활성화된 백금계 금속 함유 화합물과 전도물질, 또는 백금계 금속 함유 화합물과 절연물질 및 N2와 H2의 캐리어 가스를 기판으로 분사시켜 증착시키는 제 4 단계;로 이루어지되, 상기 제 3 단계 이후의 과정에서 백금계 함유 화합물은 활성화 상태에서 환원반응되어 기판의 표면에 증착시키는 증착방법이다. |
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본 발명은 플라즈마를 이용한 증착방법으로서, 플라즈마 장치에 N2, Ar,H2 가스를 공급시키면서 플라즈마를 발생시켜 활성영역으로 공급시키는 제 1 단계; 백금계 금속 함유 화합물 용액과 전도물질이 분산된 용액, 또는 백금계 금속 함유 화합물 용액 및 절연물질이 분산된 용액을 N2와 H2의 캐리어 가스와 함께 활성영역으로 공급하는 제 2 단계; 활성영역에 공급된 백금계 금속 함유 화합물 용액과 전도물질이 분산된 용액, 또는 백금계 금속 함유 화합물 용액 및 절연물질이 분산된 용액을 플라즈마에 의해 기화시키고 라디칼을 발생시켜 활성화시키는 제 3 단계; 활성화된 백금계 금속 함유 화합물과 전도물질, 또는 백금계 금속 함유 화합물과 절연물질 및 N2와 H2의 캐리어 가스를 기판으로 분사시켜 증착시키는 제 4 단계;로 이루어지되, 상기 제 3 단계 이후의 과정에서 백금계 함유 화합물은 활성화 상태에서 환원반응되어 기판의 표면에 증착시키는 증착방법이다.</description><language>eng ; kor</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230816&DB=EPODOC&CC=KR&NR=20230119458A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230816&DB=EPODOC&CC=KR&NR=20230119458A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE MYEONGJI</creatorcontrib><creatorcontrib>BAE KIE HWA</creatorcontrib><creatorcontrib>JU JINHOON</creatorcontrib><title>DEPOSITION METHOD USING PLASMA</title><description>The present invention relates to a deposition method using plasma, which comprises: a first step to generate plasma while supplying N_2, Ar, and H_2 gases to a plasma apparatus, and supply the plasma to an active region; a second step to supply a solution with a platinum-based metal-containing compound solution and a conductive material dispersed or a solution with a platinum-based metal-containing compound solution and an insulation material dispersed to the active region along with carrier gas of N_2 and H_2; a third step to gasify the solution with a platinum-based metal-containing compound solution and a conductive material dispersed or the solution with a platinum-based metal-containing compound solution and an insulation material dispersed, which is supplied to the active region, by plasma, and generate radicals to activate the same; and a fourth step to spray deposit the activated platinum-based metal-containing compound and the conductive material or the platinum-based metal-containing compound with the insulation material, which is activated, onto a substrate. In the processes of the third step and later, the platinum-based metal-containing compound is reduced in the activated status and is deposited on a surface of a substrate. Therefore, the deposition can be conducted within a short period of time.
본 발명은 플라즈마를 이용한 증착방법으로서, 플라즈마 장치에 N2, Ar,H2 가스를 공급시키면서 플라즈마를 발생시켜 활성영역으로 공급시키는 제 1 단계; 백금계 금속 함유 화합물 용액과 전도물질이 분산된 용액, 또는 백금계 금속 함유 화합물 용액 및 절연물질이 분산된 용액을 N2와 H2의 캐리어 가스와 함께 활성영역으로 공급하는 제 2 단계; 활성영역에 공급된 백금계 금속 함유 화합물 용액과 전도물질이 분산된 용액, 또는 백금계 금속 함유 화합물 용액 및 절연물질이 분산된 용액을 플라즈마에 의해 기화시키고 라디칼을 발생시켜 활성화시키는 제 3 단계; 활성화된 백금계 금속 함유 화합물과 전도물질, 또는 백금계 금속 함유 화합물과 절연물질 및 N2와 H2의 캐리어 가스를 기판으로 분사시켜 증착시키는 제 4 단계;로 이루어지되, 상기 제 3 단계 이후의 과정에서 백금계 함유 화합물은 활성화 상태에서 환원반응되어 기판의 표면에 증착시키는 증착방법이다.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJBzcQ3wD_YM8fT3U_B1DfHwd1EIDfb0c1cI8HEM9nXkYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBkbGBoaGliamFo7GxKkCAD-lIko</recordid><startdate>20230816</startdate><enddate>20230816</enddate><creator>LEE MYEONGJI</creator><creator>BAE KIE HWA</creator><creator>JU JINHOON</creator><scope>EVB</scope></search><sort><creationdate>20230816</creationdate><title>DEPOSITION METHOD USING PLASMA</title><author>LEE MYEONGJI ; BAE KIE HWA ; JU JINHOON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230119458A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2023</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE MYEONGJI</creatorcontrib><creatorcontrib>BAE KIE HWA</creatorcontrib><creatorcontrib>JU JINHOON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE MYEONGJI</au><au>BAE KIE HWA</au><au>JU JINHOON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEPOSITION METHOD USING PLASMA</title><date>2023-08-16</date><risdate>2023</risdate><abstract>The present invention relates to a deposition method using plasma, which comprises: a first step to generate plasma while supplying N_2, Ar, and H_2 gases to a plasma apparatus, and supply the plasma to an active region; a second step to supply a solution with a platinum-based metal-containing compound solution and a conductive material dispersed or a solution with a platinum-based metal-containing compound solution and an insulation material dispersed to the active region along with carrier gas of N_2 and H_2; a third step to gasify the solution with a platinum-based metal-containing compound solution and a conductive material dispersed or the solution with a platinum-based metal-containing compound solution and an insulation material dispersed, which is supplied to the active region, by plasma, and generate radicals to activate the same; and a fourth step to spray deposit the activated platinum-based metal-containing compound and the conductive material or the platinum-based metal-containing compound with the insulation material, which is activated, onto a substrate. In the processes of the third step and later, the platinum-based metal-containing compound is reduced in the activated status and is deposited on a surface of a substrate. Therefore, the deposition can be conducted within a short period of time.
본 발명은 플라즈마를 이용한 증착방법으로서, 플라즈마 장치에 N2, Ar,H2 가스를 공급시키면서 플라즈마를 발생시켜 활성영역으로 공급시키는 제 1 단계; 백금계 금속 함유 화합물 용액과 전도물질이 분산된 용액, 또는 백금계 금속 함유 화합물 용액 및 절연물질이 분산된 용액을 N2와 H2의 캐리어 가스와 함께 활성영역으로 공급하는 제 2 단계; 활성영역에 공급된 백금계 금속 함유 화합물 용액과 전도물질이 분산된 용액, 또는 백금계 금속 함유 화합물 용액 및 절연물질이 분산된 용액을 플라즈마에 의해 기화시키고 라디칼을 발생시켜 활성화시키는 제 3 단계; 활성화된 백금계 금속 함유 화합물과 전도물질, 또는 백금계 금속 함유 화합물과 절연물질 및 N2와 H2의 캐리어 가스를 기판으로 분사시켜 증착시키는 제 4 단계;로 이루어지되, 상기 제 3 단계 이후의 과정에서 백금계 함유 화합물은 활성화 상태에서 환원반응되어 기판의 표면에 증착시키는 증착방법이다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | DEPOSITION METHOD USING PLASMA |
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