CMP SLURRY COMPOSITION FOR POLISHING COPPER AND METHOD FOR POLISHING COPPER LAYER USING THE SAME

Provided are a CMP slurry composition for polishing copper and a method for polishing a copper layer using the same. The CMP slurry composition for polishing copper comprises: at least one solvent selected from a polar solvent and a non-polar solvent; an abrasive; and one or more compounds from a co...

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Bibliographische Detailangaben
Hauptverfasser:	SIM SOO YEON, KIM YONG GOOG, HWANG JA YOUNG, LEE JI HO, KIM JEONG HEE, CHOI SE YOUNG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	Provided are a CMP slurry composition for polishing copper and a method for polishing a copper layer using the same. The CMP slurry composition for polishing copper comprises: at least one solvent selected from a polar solvent and a non-polar solvent; an abrasive; and one or more compounds from a compound of chemical formula 1 and a compound of chemical formula 2. The CMP slurry composition for polishing copper of the present invention is characterized by high polishing flatness by reducing surface defects such as dishing and erosion. 극성 용매, 비극성 용매 중 1종 이상의 용매; 연마제; 및 화학식 1의 화합물, 화학식 2의 화합물 중 1종 이상의 화합물을 포함하는 것인, 구리 연마용 CMP 슬러리 조성물 및 이를 이용한 구리 막 연마 방법이 제공된다.