Process gas for low-temperature etching plasma etching apparatus and method for manufacturing a semiconductor device using the same

The present invention relates to a process gas for low-temperature etching, a plasma etching device, and a method of manufacturing a semiconductor device using the same. More specifically, the present invention comprises: forming a mold film on a substrate; forming a hard mask film on the mold film;...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SASAKI HIROSHI, KANG SONGYUN, LEE DONGKYU, WANG YOUNSEON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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