OPTICAL SYSTEM IN PARTICULAR FOR CHARACTERIZING A MICROLITHOGRAPHY MASK

The present invention relates to an optical system for characterizing a microlithography mask in particular. The optical system comprises: a light source (101, 201, 251) for generating light with a wavelength of less than 30 nm; an illumination beam path from the light source to the object plane; an...

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Bibliographische Detailangaben
Hauptverfasser:	PERLITZ SASCHA, MATEJKA ULRICH, RUOFF JOHANNES
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING
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Beschreibung
Zusammenfassung:	The present invention relates to an optical system for characterizing a microlithography mask in particular. The optical system comprises: a light source (101, 201, 251) for generating light with a wavelength of less than 30 nm; an illumination beam path from the light source to the object plane; an imaging beam path from the object plane to the image plane; and beam splitters (103, 205, 254) through which both the illumination beam path and the imaging beam path travel. 본 발명은 30 nm 미만의 파장의 광을 생성하기 위한 광원(101, 201, 251), 광원에서 물체 평면으로 이어지는 조명 빔 경로, 물체 평면에서 이미지 평면으로 이어지는 이미징 빔 경로 및 조명 빔 경로와 이미징 빔 경로가 둘다 경유하여 진행하는 빔 스플리터(103, 205, 254)를 포함하는 특히 마이크로리소그래피 마스크를 특징화하기 위한 광학 시스템에 관한 것이다.