PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS

According to the present invention, a photoresist composition comprises: a first polymer including a first repeating unit containing a hydroxyaryl group, a second repeating unit containing a first acid-labile group, and a third repeat unit having a pKa of 12 or less and containing a first base-solub...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUZANNE M. COLEY, JONG KEUN PARK, CHOONG BONG LEE, YINJIE CEN, LI CUI, JAMES F. CAMERON, EMAD AQAD
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
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