SEMICONDUCTOR PACKAGE

In accordance with one embodiment of the present invention, provided is a semiconductor package including: a first wiring structure; a first semiconductor chip disposed on the first wiring structure, and comprising a plurality of through vias and first pads connected with the plurality of through vi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE HEE SEOK, IM YUN HYEOK, CHO YOUNG SANG
Format: Patent
Sprache:eng ; kor
Schlagworte:
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Beschreibung
Zusammenfassung:In accordance with one embodiment of the present invention, provided is a semiconductor package including: a first wiring structure; a first semiconductor chip disposed on the first wiring structure, and comprising a plurality of through vias and first pads connected with the plurality of through vias; a second semiconductor chip disposed on the first wiring structure, including second pads electrically connected with the first pads, and having a size different from the first semiconductor chip; a heat dispersion structure coming in contact with sides of at least one of the first and second semiconductor chips and surrounding the sides, and including a substance greater than silicon in thermal conductivity; and a sealant surrounding sides of the heat dispersion structure. Therefore, the present invention is capable of improving heat dissipation characteristics of a semiconductor package. 본 발명의 일 실시예는, 제1 배선 구조물; 상기 제1 배선 구조물 상에 배치되고, 복수의 관통 비아들 및 상기 복수의 관통 비아들과 연결되는 제1 패드들을 포함하는 제1 반도체 칩; 상기 제1 배선 구조물 상에 배치되고, 상기 제1 패드들과 전기적으로 연결되는 제2 패드들을 포함하고, 상기 제1 반도체 칩과 크기가 다른 제2 반도체 칩; 상기 제1 반도체 칩 및 상기 제2 반도체 칩 중 적어도 하나의 측면들과 접촉하여 이를 둘러싸고, 실리콘보다 열 전도도가 높은 물질을 포함하는 열 분산 구조물; 및 상기 열 분산 구조물의 측면들을 둘러싸는 봉합재를 포함하는 반도체 패키지를 제공한다.