Substrate processing apparatus and substrate processing method

The present invention provides a substrate processing device and a substrate processing method. Disclosed is a technology which selectively controls an ionization gas through multiple lines to be supplied during a process to control static electricity generated by frictional charging between a chemi...

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Bibliographische Detailangaben
Hauptverfasser:	KIM DO YEON, HAN JIN AH, HONG YONG HOON, LEE KANG SUK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY NATURALLY-OCCURRING ELECTRICITY SEMICONDUCTOR DEVICES STATIC ELECTRICITY
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Beschreibung
Zusammenfassung:	The present invention provides a substrate processing device and a substrate processing method. Disclosed is a technology which selectively controls an ionization gas through multiple lines to be supplied during a process to control static electricity generated by frictional charging between a chemical liquid and a substrate and discharge charging of the chemical liquid, thereby preventing particle adsorption to the substrate. 본 발명은 기판 처리 장치 및 기판 처리 방법으로서, 이온화 가스(Ionization Gas)를 복수 라인으로 선택적 제어하여 공정 중 공급함으로써 약액과 기판 간의 마찰대전 및 약액의 토출 대전으로 인해 발생된 정전기를 제어할 수 있으며, 기판으로 파티클(Particle) 흡착을 방지할 수 있는 기술을 개시한다.