Methods of treating a substrate

The substrate processing method of the present invention is a substrate processing method for manufacturing a hard mask used in a photoresist film for EUV. The method includes the steps of: preparing a substrate on which a lower film is formed; forming a tin thin film containing oxygen on the substr...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	YOON YEUNG PIL, CHO BYUNG CHUL, AN JONG KI, YI IN HWAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The substrate processing method of the present invention is a substrate processing method for manufacturing a hard mask used in a photoresist film for EUV. The method includes the steps of: preparing a substrate on which a lower film is formed; forming a tin thin film containing oxygen on the substrate on which the lower film is formed; forming a tin thin film containing carbon on the tin thin film containing oxygen to improve adhesion with the photoresist film for EUV. 본 발명의 기판 처리 방법은 EUV 용 포토레지스트막에 사용되는 하드마스크를 제조하기 위한 기판 처리 방법으로서, 하부막이 형성된 기판을 준비하는 단계; 상기 하부막이 형성된 기판 상에 산소를 함유하는 주석 박막을 형성하는 단계; 상기 EUV 용 포토레지스트막과의 접합력을 향상시키 위하여 상기 산소를 함유하는 주석 박막 상에 탄소를 함유하는 주석 박막을 형성하는 단계; 를 포함한다.