SYSTEMS AND METHODS FOR PROCESSING A SILICON SURFACE USING MULTIPLE RADICAL SPECIES

Provided is a silicone surface treatment method, which includes the steps of: using a first radical species to remove contamination from the surface and roughen the surface; and using a second radical species to smooth the roughened surface. Reactive systems for performing these methods and silicon...

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Bibliographische Detailangaben
Hauptverfasser:	M'SAAD HI, REITER STEVEN, WANG FEI, DEMOS ALEXANDROS, MISKIN CALEB, DEYE GREGORY
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is a silicone surface treatment method, which includes the steps of: using a first radical species to remove contamination from the surface and roughen the surface; and using a second radical species to smooth the roughened surface. Reactive systems for performing these methods and silicon surfaces prepared using these methods are also provided. 실리콘 표면 처리 방법은, 표면으로부터 오염을 제거하고 표면을 거칠게 하기 위해 제1 라디칼 종을 사용하는 단계; 및 거칠어진 표면을 평활화하기 위해 제2 라디칼 종을 사용하는 단계를 포함한다. 이러한 방법을 수행하기 위한 반응 시스템, 및 이러한 방법을 사용하여 제조된 실리콘 표면도 또한 제공된다.