SLURRY COMPOSITION FOR POLISHING METAL LAYER CHEMICHAL MECHANICAL POLISHING APPARATUS USING THE SAME AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

Provided are a temperature-sensitive slurry composition for chemical mechanical polishing, a chemical mechanical polishing device using the same, and a method for manufacturing a semiconductor device using the same. The slurry composition for chemical mechanical polishing includes 0.1 to 10 wt% of a...

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Bibliographische Detailangaben
Hauptverfasser:	BYUN YEA RIN, KIM IN KWON, KIM SANG KYUN, LEE HYO SAN, HWANG BYUNG KEUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	Provided are a temperature-sensitive slurry composition for chemical mechanical polishing, a chemical mechanical polishing device using the same, and a method for manufacturing a semiconductor device using the same. The slurry composition for chemical mechanical polishing includes 0.1 to 10 wt% of abrasive particles, 0.1 to 5 wt% of an oxidizing agent, and 0.01 to 30 wt% of a temperature sensitizer including metal nanoparticles or metal oxide nanoparticles, and water, and has a pH of 1 to 8. 온도 감응성 화학적 기계적 연마용 슬러리 조성물, 그를 이용하는 화학적 기계적 연마 장치, 및 그를 이용하는 반도체 소자의 제조 방법이 제공된다. 화학적 기계적 연마용 슬러리 조성물은, 연마 입자 0.1 중량% 내지 10 중량%, 산화제 0.1 중량% 내지 5 중량%, 금속 나노 입자 또는 금속 산화물 나노 입자를 포함하는 온도 감응제 0.01 중량% 내지 30 중량%, 및 물을 포함하되, 1 내지 8의 pH를 갖는다.