GaN GaN hybrid module
A GaN hybrid module is provided. According to an embodiment of the present invention, the GaN hybrid module is integrated with a full bridge circuit as one module. The full bridge circuit comprises: a high-frequency switching leg including a first GaN semiconductor element and a second GaN semicondu...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | A GaN hybrid module is provided. According to an embodiment of the present invention, the GaN hybrid module is integrated with a full bridge circuit as one module. The full bridge circuit comprises: a high-frequency switching leg including a first GaN semiconductor element and a second GaN semiconductor element; and a low-frequency switching leg including a first Si semiconductor element and a second Si semiconductor element.
GaN 하이브리드 모듈이 제공된다. 본 발명의 실시예에 따른 GaN 하이브리드 모듈은 제1GaN 반도체 소자 및 제2GaN 반도체 소자를 포함하는 고주파 스위칭 레그 및 제1Si 반도체 소자 및 제2Si 반도체 소자를 포함하는 저주파 스위칭 레그를 포함하는 풀 브리지 회로가 하나의 모듈로 일체로 이루어진다. |
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