CMP CMP SLURRY COMPOSITION HAVING HIGH REMOVAL RATE OF NITRIDE FILM

The present invention relates to a CMP slurry composition, and can provide a CMP slurry composition which has high nitride film removal selectivity because the removal amount of the nitride film is higher than that of the removal amount of an oxide film. The CMP slurry composition according to one a...

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Bibliographische Detailangaben
Hauptverfasser:	LEE JAE HAK, HWANG BO YEONG, WOO SUNG JUN, KWON CHANG GIL
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES CHEMISTRY DYES MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SKI WAXES
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Beschreibung
Zusammenfassung:	The present invention relates to a CMP slurry composition, and can provide a CMP slurry composition which has high nitride film removal selectivity because the removal amount of the nitride film is higher than that of the removal amount of an oxide film. The CMP slurry composition according to one aspect of the present invention may include slurry dispersion, additives, and a pH control agent. 본 발명은 CMP 슬러리 조성물에 대한 것으로서, 산화막 연마량에 비해 질화막 연마량이 높아 높은 질화막 제거 선택비를 가지는 CMP 연마용 슬러리 조성물을 제공할 수 있다. 본 발명의 일 측면에 따른 CMP 슬러리 조성물은, 슬러리 분산액, 첨가제 및 pH 조절제를 포함할 수 있다.