ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

Provided is an electronic device comprising a semiconductor memory. In the electronic device comprising the semiconductor memory according to one embodiment of the present invention, the semiconductor memory may comprise: a free layer having a changeable magnetization direction; a fixed layer having...

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Bibliographische Detailangaben
Hauptverfasser:	JUNG JIN WON, EEH YOUNG MIN, JUNG KU YOUL, KWAK JUNG HYEOK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Provided is an electronic device comprising a semiconductor memory. In the electronic device comprising the semiconductor memory according to one embodiment of the present invention, the semiconductor memory may comprise: a free layer having a changeable magnetization direction; a fixed layer having a fixed magnetization direction; and a magnetic tunnel junction (MTJ) structure comprising a tunnel barrier layer interposed between the free layer and the fixed layer, wherein the tunnel barrier layer may comprise a plurality of individually crystallized material layers each having a thickness of two monolayers or less. Therefore, the present invention is capable of providing the semiconductor memory that can improve a characteristic of MTJ. 반도체 메모리를 포함하는 전자 장치가 제공된다. 본 발명의 일 실시예에 따른 반도체 메모리를 포함하는 전자 장치에 있어서, 상기 반도체 메모리는 변경 가능한 자화 방향을 갖는 자유층; 고정된 자화 방향을 갖는 고정층; 및 상기 자유층과 상기 고정층 사이에 개재되는 터널 베리어층을 포함하는 MTJ(Magnetic Tunnel Junction) 구조를 포함할 수 있으며, 상기 터널 베리어층은 각각 개별적으로 결정화된 단원자층 2개(two monolayer) 이하의 두께를 갖는 복수의 물질층을 포함할 수 있다.