Plating solution for conductive particles used in semiconductor test socket plating method thereof and conductive particles plated using the same
The present invention relates to a plating solution for conductive particles used in a semiconductor test socket, a plating method thereof, and conductive particles plated using the same. The plating solution for conductive particles used in a semiconductor test socket of the present invention compr...
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| creator | HYUNG JU DO TAE HO LEE HYUK SUK KWON DEOK GON HAN SANG KYU LEE |
| description | The present invention relates to a plating solution for conductive particles used in a semiconductor test socket, a plating method thereof, and conductive particles plated using the same. The plating solution for conductive particles used in a semiconductor test socket of the present invention comprises: (a) a silver strike plating solution containing a silver compound; (b) an electrolytic silver plating solution containing a silver compound, conductive salt, alcohol, and surfactant; and (c) an electrolytic gold plating solution containing a gold compound, conductive salt, and plating leveling agent.
본 발명은 반도체 테스트 소켓에 사용되는 도전성 입자의 도금액, 이의 도금방법, 및 이를 이용하여 도금된 도전성 입자에 관한 것이다. |
| format | Patent |
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본 발명은 반도체 테스트 소켓에 사용되는 도전성 입자의 도금액, 이의 도금방법, 및 이를 이용하여 도금된 도전성 입자에 관한 것이다.</description><language>eng ; kor</language><subject>APPARATUS THEREFOR ; CHEMISTRY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; METALLURGY ; PHYSICS ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; TESTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230608&DB=EPODOC&CC=KR&NR=20230081905A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230608&DB=EPODOC&CC=KR&NR=20230081905A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HYUNG JU DO</creatorcontrib><creatorcontrib>TAE HO LEE</creatorcontrib><creatorcontrib>HYUK SUK KWON</creatorcontrib><creatorcontrib>DEOK GON HAN</creatorcontrib><creatorcontrib>SANG KYU LEE</creatorcontrib><title>Plating solution for conductive particles used in semiconductor test socket plating method thereof and conductive particles plated using the same</title><description>The present invention relates to a plating solution for conductive particles used in a semiconductor test socket, a plating method thereof, and conductive particles plated using the same. The plating solution for conductive particles used in a semiconductor test socket of the present invention comprises: (a) a silver strike plating solution containing a silver compound; (b) an electrolytic silver plating solution containing a silver compound, conductive salt, alcohol, and surfactant; and (c) an electrolytic gold plating solution containing a gold compound, conductive salt, and plating leveling agent.
본 발명은 반도체 테스트 소켓에 사용되는 도전성 입자의 도금액, 이의 도금방법, 및 이를 이용하여 도금된 도전성 입자에 관한 것이다.</description><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLEKwjAUheEuDqK-wwVnIbYIOooogouIu4T01AbTJPTe-B6-sSl0dHA6y3f-afG5Oi3WP4mDS2KDpyb0ZIKvkxH7BkXdizUOTIlRk_XE6OwIMhWw5LN5QSiOrQ7ShpqkRY_QkPb17-LgczPxcMqaWHeYF5NGO8Zi3FmxPB3vh_MKMTzAURt4yONyK1VZKbVd79RmX_2nvvTMUaA</recordid><startdate>20230608</startdate><enddate>20230608</enddate><creator>HYUNG JU DO</creator><creator>TAE HO LEE</creator><creator>HYUK SUK KWON</creator><creator>DEOK GON HAN</creator><creator>SANG KYU LEE</creator><scope>EVB</scope></search><sort><creationdate>20230608</creationdate><title>Plating solution for conductive particles used in semiconductor test socket plating method thereof and conductive particles plated using the same</title><author>HYUNG JU DO ; TAE HO LEE ; HYUK SUK KWON ; DEOK GON HAN ; SANG KYU LEE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230081905A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2023</creationdate><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>HYUNG JU DO</creatorcontrib><creatorcontrib>TAE HO LEE</creatorcontrib><creatorcontrib>HYUK SUK KWON</creatorcontrib><creatorcontrib>DEOK GON HAN</creatorcontrib><creatorcontrib>SANG KYU LEE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HYUNG JU DO</au><au>TAE HO LEE</au><au>HYUK SUK KWON</au><au>DEOK GON HAN</au><au>SANG KYU LEE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Plating solution for conductive particles used in semiconductor test socket plating method thereof and conductive particles plated using the same</title><date>2023-06-08</date><risdate>2023</risdate><abstract>The present invention relates to a plating solution for conductive particles used in a semiconductor test socket, a plating method thereof, and conductive particles plated using the same. The plating solution for conductive particles used in a semiconductor test socket of the present invention comprises: (a) a silver strike plating solution containing a silver compound; (b) an electrolytic silver plating solution containing a silver compound, conductive salt, alcohol, and surfactant; and (c) an electrolytic gold plating solution containing a gold compound, conductive salt, and plating leveling agent.
본 발명은 반도체 테스트 소켓에 사용되는 도전성 입자의 도금액, 이의 도금방법, 및 이를 이용하여 도금된 도전성 입자에 관한 것이다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR CHEMISTRY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES METALLURGY PHYSICS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS TESTING |
| title | Plating solution for conductive particles used in semiconductor test socket plating method thereof and conductive particles plated using the same |
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