Plating solution for conductive particles used in semiconductor test socket plating method thereof and conductive particles plated using the same

The present invention relates to a plating solution for conductive particles used in a semiconductor test socket, a plating method thereof, and conductive particles plated using the same. The plating solution for conductive particles used in a semiconductor test socket of the present invention comprises: (a) a silver strike plating solution containing a silver compound; (b) an electrolytic silver plating solution containing a silver compound, conductive salt, alcohol, and surfactant; and (c) an electrolytic gold plating solution containing a gold compound, conductive salt, and plating leveling agent. 본 발명은 반도체 테스트 소켓에 사용되는 도전성 입자의 도금액, 이의 도금방법, 및 이를 이용하여 도금된 도전성 입자에 관한 것이다.