ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
Provided are an electronic device comprising a semiconductor memory and a manufacturing method thereof. In the electronic device comprising a semiconductor memory according to one embodiment of the present invention, the semiconductor memory may comprise: a memory cell disposed on a substrate and co...
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| creator | DONG CHA DEOK CHOI KEO ROCK KIM GUK CHEON |
| description | Provided are an electronic device comprising a semiconductor memory and a manufacturing method thereof. In the electronic device comprising a semiconductor memory according to one embodiment of the present invention, the semiconductor memory may comprise: a memory cell disposed on a substrate and comprising a variable resistance layer and a selection element layer; a protective layer disposed on a side surface of the memory cell and an upper surface of the substrate; and a first encapsulation layer disposed so as to surround the memory cell and the protective layer, wherein the protective layer may have a surface morphology modified by helium processing. Therefore, the present invention is capable of increasing reliability.
반도체 메모리를 포함하는 전자 장치 및 그 제조 방법이 제공된다. 본 발명의 일 실시예에 따른 반도체 메모리를 포함하는 전자 장치에 있어서, 상기 반도체 메모리는 기판 상에 배치되며, 가변 저항층 및 선택 소자층을 포함하는 메모리 셀; 상기 메모리 셀의 측면 및 상기 기판의 상면에 배치된 보호층; 및 상기 메모리 셀 및 상기 보호층을 둘러싸도록 배치되는 제1 캡슐화층을 포함할 수 있으며, 상기 보호층은 헬륨 처리에 의해 개질된 표면 몰폴로지를 가질 수 있다. |
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반도체 메모리를 포함하는 전자 장치 및 그 제조 방법이 제공된다. 본 발명의 일 실시예에 따른 반도체 메모리를 포함하는 전자 장치에 있어서, 상기 반도체 메모리는 기판 상에 배치되며, 가변 저항층 및 선택 소자층을 포함하는 메모리 셀; 상기 메모리 셀의 측면 및 상기 기판의 상면에 배치된 보호층; 및 상기 메모리 셀 및 상기 보호층을 둘러싸도록 배치되는 제1 캡슐화층을 포함할 수 있으며, 상기 보호층은 헬륨 처리에 의해 개질된 표면 몰폴로지를 가질 수 있다.</description><language>eng ; kor</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTRICITY ; PHYSICS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230607&DB=EPODOC&CC=KR&NR=20230080159A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230607&DB=EPODOC&CC=KR&NR=20230080159A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DONG CHA DEOK</creatorcontrib><creatorcontrib>CHOI KEO ROCK</creatorcontrib><creatorcontrib>KIM GUK CHEON</creatorcontrib><title>ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME</title><description>Provided are an electronic device comprising a semiconductor memory and a manufacturing method thereof. In the electronic device comprising a semiconductor memory according to one embodiment of the present invention, the semiconductor memory may comprise: a memory cell disposed on a substrate and comprising a variable resistance layer and a selection element layer; a protective layer disposed on a side surface of the memory cell and an upper surface of the substrate; and a first encapsulation layer disposed so as to surround the memory cell and the protective layer, wherein the protective layer may have a surface morphology modified by helium processing. Therefore, the present invention is capable of increasing reliability.
반도체 메모리를 포함하는 전자 장치 및 그 제조 방법이 제공된다. 본 발명의 일 실시예에 따른 반도체 메모리를 포함하는 전자 장치에 있어서, 상기 반도체 메모리는 기판 상에 배치되며, 가변 저항층 및 선택 소자층을 포함하는 메모리 셀; 상기 메모리 셀의 측면 및 상기 기판의 상면에 배치된 보호층; 및 상기 메모리 셀 및 상기 보호층을 둘러싸도록 배치되는 제1 캡슐화층을 포함할 수 있으며, 상기 보호층은 헬륨 처리에 의해 개질된 표면 몰폴로지를 가질 수 있다.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>ELECTRICITY</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB19XF1Dgny9_N0VnBxDfN0dlVw9HNR8HUN8fB3UXDzD1Jwc3QK8nR2DPH0c1cI8XBVCHb0deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGRsYGBhYGhqaWjsbEqQIAVqooCA</recordid><startdate>20230607</startdate><enddate>20230607</enddate><creator>DONG CHA DEOK</creator><creator>CHOI KEO ROCK</creator><creator>KIM GUK CHEON</creator><scope>EVB</scope></search><sort><creationdate>20230607</creationdate><title>ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME</title><author>DONG CHA DEOK ; CHOI KEO ROCK ; KIM GUK CHEON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230080159A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2023</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>ELECTRICITY</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>DONG CHA DEOK</creatorcontrib><creatorcontrib>CHOI KEO ROCK</creatorcontrib><creatorcontrib>KIM GUK CHEON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DONG CHA DEOK</au><au>CHOI KEO ROCK</au><au>KIM GUK CHEON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME</title><date>2023-06-07</date><risdate>2023</risdate><abstract>Provided are an electronic device comprising a semiconductor memory and a manufacturing method thereof. In the electronic device comprising a semiconductor memory according to one embodiment of the present invention, the semiconductor memory may comprise: a memory cell disposed on a substrate and comprising a variable resistance layer and a selection element layer; a protective layer disposed on a side surface of the memory cell and an upper surface of the substrate; and a first encapsulation layer disposed so as to surround the memory cell and the protective layer, wherein the protective layer may have a surface morphology modified by helium processing. Therefore, the present invention is capable of increasing reliability.
반도체 메모리를 포함하는 전자 장치 및 그 제조 방법이 제공된다. 본 발명의 일 실시예에 따른 반도체 메모리를 포함하는 전자 장치에 있어서, 상기 반도체 메모리는 기판 상에 배치되며, 가변 저항층 및 선택 소자층을 포함하는 메모리 셀; 상기 메모리 셀의 측면 및 상기 기판의 상면에 배치된 보호층; 및 상기 메모리 셀 및 상기 보호층을 둘러싸도록 배치되는 제1 캡슐화층을 포함할 수 있으며, 상기 보호층은 헬륨 처리에 의해 개질된 표면 몰폴로지를 가질 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRICITY PHYSICS |
| title | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME |
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