ETCHANT COMPOSITION FOR METAL LAYER CONTAINING SILVER OR INDIUM AND METHOD FOR MANUFACTURING THE SAME

The present invention relates to a composition for selectively etching an indium or silver-containing metal film. According to the present invention, provided is an etchant composition indicating excellent etching characteristics in terms of etching speed, bias, residue, precipitate, and etching uni...

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Bibliographische Detailangaben
Hauptverfasser: JUNG SEOK IL, PARK JONG HEE, KIM IK JOON, KIM YANG RYEONG, JEONG MIN GYEONG, KIM SE HOON, LEE BO YEON, NOH WON HO, KIM HYOUNG SIK, PARK SANG SEUNG
Format: Patent
Sprache:eng ; kor
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Beschreibung
Zusammenfassung:The present invention relates to a composition for selectively etching an indium or silver-containing metal film. According to the present invention, provided is an etchant composition indicating excellent etching characteristics in terms of etching speed, bias, residue, precipitate, and etching uniformity while minimizing damage to an underlying metal film. 본 발명은 인듐 또는 은 함유 금속막을 선택적으로 식각하기 위한 조성물에 관한 것이다. 본 발명에 따르면, 하부 금속막의 손상을 최소화하면서도, 식각 속도, 바이어스, 잔사, 석출물, 식각 균일도 면에서 모두 우수한 식각 특성을 나타내는 식각액 조성물을 제공할 수 있다.