Method of depositing thin film

The present invention is to provide a thin film deposition method for forming a TiOCN thin film that can control the RI value and wet etch rate for application to a hard mask film without a complicated process. The present invention provides a thin film deposition method which uses a thin film depos...

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Bibliographische Detailangaben
Hauptverfasser:	SEO KYOUNG CHEUN, KIM DAE KYU, SONG JI HOON, CHOI YOEN JU
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention is to provide a thin film deposition method for forming a TiOCN thin film that can control the RI value and wet etch rate for application to a hard mask film without a complicated process. The present invention provides a thin film deposition method which uses a thin film deposition device including a chamber in which a substrate processing area is formed, a showerhead, and a substrate supporter capable of supporting a substrate. The thin film deposition method comprises: an adsorption step of supplying a Ti precursor containing nitrogen and carbon into a substrate processing area and adsorbing it onto a substrate; and a thin film forming step of supplying an oxygen-containing gas to the substrate without supplying a nitrogen-containing gas and forming a plasma atmosphere inside the chamber to react with the Ti precursor adsorbed on the substrate to deposit a TiOCN thin film. 본 발명은 기판 처리 영역이 형성된 챔버와 샤워헤드 및 기판을 지지할 수 있는 기판지지부를 포함하는 박막 증착 장치를 이용한 박막 증착 방법으로서, 상기 기판 처리 영역 내로 질소와 탄소를 포함하는 Ti 전구체를 공급하여 상기 기판 상에 흡착시키는 흡착단계; 및 상기 기판 상에 질소 함유 가스 공급 없이 산소 함유 가스를 공급하고, 상기 챔버 내부에 플라즈마 분위기를 형성함으로써 상기 기판 상에 흡착된 Ti 전구와 반응시켜 TiOCN 박막을 증착하는 박막형성단계;를 포함하는, 박막 증착 방법을 제공한다.