Method of manufacturing organic light emitting diode
A substrate manufacturing method according to one embodiment of the present invention comprises: a step of forming a first indium tin oxide (ITO) layer on a substrate; a step of forming a light scattering layer on the first ITO layer; a step of forming a nano-uneven structure by etching the light sc...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | A substrate manufacturing method according to one embodiment of the present invention comprises: a step of forming a first indium tin oxide (ITO) layer on a substrate; a step of forming a light scattering layer on the first ITO layer; a step of forming a nano-uneven structure by etching the light scattering layer; a step of forming an Ag layer on the light scattering layer wherein the nano-uneven structure is formed; and a step of forming a second ITO layer on the Ag layer. Therefore, the present invention is capable of increasing an efficiency of an organic light emitting element.
본 발명의 일 실시예에 따른 기판 제조 방법은 기판 상에 제1ITO(Indium Tin Oxide)층을 형성하는 단계; 상기 제1ITO층 상에 광산란층을 형성하는 단계; 상기 광산란층을 식각하여 나노 요철 구조를 형성하는 단계; 상기 나노 요철 구조가 형성된 상기 광산란층 상에 Ag층을 형성하는 단계; 상기 Ag층 상에 제2ITO층을 형성하는 단계를 포함한다. |
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