FILM FORMING METHOD AND FILM FORMING APPARATUS

The present invention provides a technology for forming a film with a crystal structure containing strontium, titanium, and oxygen on a titanium nitride film. On the upper surface of the titanium nitride film formed on a substrate, an amorphous film is formed, which contains strontium and oxygen and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MIYATANI KOTARO, NAKAMURA HIDEO, KARAKAWA TAKAYUKI, MOROZUMI YUICHIRO, HARADA KATSUSHIGE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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