FILM FORMING METHOD AND FILM FORMING APPARATUS

The present invention provides a technology for forming a film with a crystal structure containing strontium, titanium, and oxygen on a titanium nitride film. On the upper surface of the titanium nitride film formed on a substrate, an amorphous film is formed, which contains strontium and oxygen and...

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Bibliographische Detailangaben
Hauptverfasser:	MIYATANI KOTARO, NAKAMURA HIDEO, KARAKAWA TAKAYUKI, MOROZUMI YUICHIRO, HARADA KATSUSHIGE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention provides a technology for forming a film with a crystal structure containing strontium, titanium, and oxygen on a titanium nitride film. On the upper surface of the titanium nitride film formed on a substrate, an amorphous film is formed, which contains strontium and oxygen and whose content ratio based on the number of titanium atoms to strontium is within the range of 0 or more and less than 1.0. Next, the film with a crystal structure contains strontium, titanium, and oxygen, with titanium diffused from the titanium nitride film by heating the substrate on which the amorphous film is formed at a temperature of 500℃ or higher. 본 발명은, 질화티타늄막 상에, 스트론튬과 티타늄과 산소를 함유하는 결정 구조의 막을 형성하는 기술을 제공하는 것이다. 상기 기판에 형성된 질화티타늄막의 상면에, 스트론튬과 산소를 함유하고, 스트론튬에 대한 티타늄의 원자수 기준의 함유비가 0 이상, 1.0 미만의 범위 내의 값인 아몰퍼스 구조의 막을 형성한다. 이어서, 상기 아몰퍼스 구조의 막이 형성된 상기 기판을, 500℃ 이상의 온도에서 가열하여, 상기 질화티타늄막으로부터 확산한 티타늄을 포함하는, 상기 스트론튬과 티타늄과 산소를 함유하는 결정 구조의 막을 얻는다.