Dielectric material device including the same and method of preparing the dielectric material

A dielectric, a device including the same, and a manufacturing method of the dielectric are disclosed. The dielectric has a permittivity of 600 or more at 1 kHz and includes a NaNbO_3 ternary material having a temperature coefficient of capacitance (TCC) of -15% to 15% in the range of -55℃ to 200℃ a...

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Bibliographische Detailangaben
Hauptverfasser:	JO, GI YOUNG, PARK, HYEON CHEOL, JUNG, DOH WON, JEONG, TAE WON, YANG, DAE JIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRICITY
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Beschreibung
Zusammenfassung:	A dielectric, a device including the same, and a manufacturing method of the dielectric are disclosed. The dielectric has a permittivity of 600 or more at 1 kHz and includes a NaNbO_3 ternary material having a temperature coefficient of capacitance (TCC) of -15% to 15% in the range of -55℃ to 200℃ according to Equation 1 below, wherein the NaNbO_3 ternary material may include a perovskite phase in which a Sm element is substituted at a Na site. [Equation 1] TCC(%) = [(C - C_RT)/C_RT] × 100. In Equation 1, C is the capacitance value measured within the temperature range of -55℃ to 200℃, and C_RT is the capacitance value measured at 25℃. Accordingly, the dielectric is applicable to high-temperature MLCC for vehicles or special purposes. 유전체, 이를 포함하는 장치, 및 상기 유전체의 제조방법을 개시한다. 상기 유전체는 1 kHz에서의 유전율(permittivity)이 600 이상이고, -55 ℃ 내지 +200 ℃ 범위에서 하기 식 1에 따른 정전 용량의 변화(Temperature Coefficient of Capacitance, TCC)가 -15 % 내지 15 %인 NaNbO3 삼원계 재료를 포함하고, 상기 NaNbO3 삼원계 재료는 Na 사이트에 Sm 원소가 치환된 페로브스카이트 상을 포함할 수 있다: [식 1] TCC(%) = [(C-CRT/CRT] × 100 식 1에서, C는 -55 ℃ 내지 200 ℃ 온도 범위내에서 측정한 정전용량 값이고, CRT는 25℃에서 측정한 정전용량 값이다.