RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

The present invention relates to a resist topcoat composition comprising an acrylic copolymer comprising a first structural unit represented by chemical formula M-1 and a second structural unit represented by chemical formula M-2; an acidic compound; and a solvent, and a pattern forming method using...

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Bibliographische Detailangaben
Hauptverfasser:	CHUN MINKI, KWON SOONHYUNG, BAE SHINHYO, KIM SEONGJIN, CHO AHRA, BAEK JAEYEOL, PARK HYEON, KIM MINSOO, JIN HWAYOUNG, NAMGUNG RAN, CHOI YOOJEONG, SONG DAESEOK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS
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Beschreibung
Zusammenfassung:	The present invention relates to a resist topcoat composition comprising an acrylic copolymer comprising a first structural unit represented by chemical formula M-1 and a second structural unit represented by chemical formula M-2; an acidic compound; and a solvent, and a pattern forming method using the resist topcoat composition. Details of the chemical formulas M-1 and M-2 are as described in the specification. The resist topcoat composition of the present invention can implement a high-resolution pattern and improve the yield by removing single line open (SLO) defects. 화학식 M-1로 표시되는 제1 구조 단위, 및 화학식 M-2로 표시되는 제2 구조 단위를 포함하는 아크릴계 공중합체; 산성 화합물; 그리고 용매를 포함하는 레지스트 상층막용 조성물과 상기 레지스트 상층막용 조성물을 이용하는 패턴형성방법에 관한 것이다. 상기 화학식 M-1 및 화학식 M-2에 대한 상세 내용은 명세서에 기재한 바와 같다.