RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
The present invention relates to: a composition for a resist upper layer film, which contains: an acrylic copolymer including a first structural unit represented by a chemical formula M-1 and a second structural unit represented by at least one of chemical formulas M-2A, M-2B and M-2C; acidic compou...
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| creator | CHUN MINKI KWON SOONHYUNG BAE SHINHYO KIM SEONGJIN CHO AHRA BAEK JAEYEOL PARK HYEON KIM MINSOO JIN HWAYOUNG NAMGUNG RAN CHOI YOOJEONG SONG DAESEOK |
| description | The present invention relates to: a composition for a resist upper layer film, which contains: an acrylic copolymer including a first structural unit represented by a chemical formula M-1 and a second structural unit represented by at least one of chemical formulas M-2A, M-2B and M-2C; acidic compounds; and a solvent, and a pattern formation method using the composition for the resist upper layer film. Details of the chemical formulas M-1, M-2A, M-2B, and M-2C are as described in the specification.
화학식 M-1로 표시되는 제1 구조 단위, 및 화학식 M-2A, 화학식 M-2B 및 화학식 M-2C 중 적어도 하나로 표시되는 제2 구조 단위를 포함하는 아크릴계 공중합체; 산성 화합물; 그리고 용매를 포함하는 레지스트 상층막용 조성물과 상기 레지스트 상층막용 조성물을 이용하는 패턴형성방법에 관한 것이다. 상기 화학식 M-1, 화학식 M-2A, 화학식 M-2B 및 화학식 M-2C에 대한 상세 내용은 명세서에 기재한 바와 같다. |
| format | Patent |
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화학식 M-1로 표시되는 제1 구조 단위, 및 화학식 M-2A, 화학식 M-2B 및 화학식 M-2C 중 적어도 하나로 표시되는 제2 구조 단위를 포함하는 아크릴계 공중합체; 산성 화합물; 그리고 용매를 포함하는 레지스트 상층막용 조성물과 상기 레지스트 상층막용 조성물을 이용하는 패턴형성방법에 관한 것이다. 상기 화학식 M-1, 화학식 M-2A, 화학식 M-2B 및 화학식 M-2C에 대한 상세 내용은 명세서에 기재한 바와 같다.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ; ELECTROGRAPHY ; HOLOGRAPHY ; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230316&DB=EPODOC&CC=KR&NR=20230037370A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230316&DB=EPODOC&CC=KR&NR=20230037370A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHUN MINKI</creatorcontrib><creatorcontrib>KWON SOONHYUNG</creatorcontrib><creatorcontrib>BAE SHINHYO</creatorcontrib><creatorcontrib>KIM SEONGJIN</creatorcontrib><creatorcontrib>CHO AHRA</creatorcontrib><creatorcontrib>BAEK JAEYEOL</creatorcontrib><creatorcontrib>PARK HYEON</creatorcontrib><creatorcontrib>KIM MINSOO</creatorcontrib><creatorcontrib>JIN HWAYOUNG</creatorcontrib><creatorcontrib>NAMGUNG RAN</creatorcontrib><creatorcontrib>CHOI YOOJEONG</creatorcontrib><creatorcontrib>SONG DAESEOK</creatorcontrib><title>RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><description>The present invention relates to: a composition for a resist upper layer film, which contains: an acrylic copolymer including a first structural unit represented by a chemical formula M-1 and a second structural unit represented by at least one of chemical formulas M-2A, M-2B and M-2C; acidic compounds; and a solvent, and a pattern formation method using the composition for the resist upper layer film. Details of the chemical formulas M-1, M-2A, M-2B, and M-2C are as described in the specification.
화학식 M-1로 표시되는 제1 구조 단위, 및 화학식 M-2A, 화학식 M-2B 및 화학식 M-2C 중 적어도 하나로 표시되는 제2 구조 단위를 포함하는 아크릴계 공중합체; 산성 화합물; 그리고 용매를 포함하는 레지스트 상층막용 조성물과 상기 레지스트 상층막용 조성물을 이용하는 패턴형성방법에 관한 것이다. 상기 화학식 M-1, 화학식 M-2A, 화학식 M-2B 및 화학식 M-2C에 대한 상세 내용은 명세서에 기재한 바와 같다.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKwjAQQLM4iPoPB85CaIbOIU1MkORC7pxLKeckWqj_jwgOjk6PB-9tFTZPiRgYq0PL4DBXpMQJC9gyQPYccQAMELDlVM5QLbNvheBKH-Xof6e92tym-yqHL3fqGDy7eJLlOcq6TLM85DVeWqc7o7XpTa-t-a96Ay7hL_c</recordid><startdate>20230316</startdate><enddate>20230316</enddate><creator>CHUN MINKI</creator><creator>KWON SOONHYUNG</creator><creator>BAE SHINHYO</creator><creator>KIM SEONGJIN</creator><creator>CHO AHRA</creator><creator>BAEK JAEYEOL</creator><creator>PARK HYEON</creator><creator>KIM MINSOO</creator><creator>JIN HWAYOUNG</creator><creator>NAMGUNG RAN</creator><creator>CHOI YOOJEONG</creator><creator>SONG DAESEOK</creator><scope>EVB</scope></search><sort><creationdate>20230316</creationdate><title>RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><author>CHUN MINKI ; KWON SOONHYUNG ; BAE SHINHYO ; KIM SEONGJIN ; CHO AHRA ; BAEK JAEYEOL ; PARK HYEON ; KIM MINSOO ; JIN HWAYOUNG ; NAMGUNG RAN ; CHOI YOOJEONG ; SONG DAESEOK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20230037370A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2023</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>CHUN MINKI</creatorcontrib><creatorcontrib>KWON SOONHYUNG</creatorcontrib><creatorcontrib>BAE SHINHYO</creatorcontrib><creatorcontrib>KIM SEONGJIN</creatorcontrib><creatorcontrib>CHO AHRA</creatorcontrib><creatorcontrib>BAEK JAEYEOL</creatorcontrib><creatorcontrib>PARK HYEON</creatorcontrib><creatorcontrib>KIM MINSOO</creatorcontrib><creatorcontrib>JIN HWAYOUNG</creatorcontrib><creatorcontrib>NAMGUNG RAN</creatorcontrib><creatorcontrib>CHOI YOOJEONG</creatorcontrib><creatorcontrib>SONG DAESEOK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHUN MINKI</au><au>KWON SOONHYUNG</au><au>BAE SHINHYO</au><au>KIM SEONGJIN</au><au>CHO AHRA</au><au>BAEK JAEYEOL</au><au>PARK HYEON</au><au>KIM MINSOO</au><au>JIN HWAYOUNG</au><au>NAMGUNG RAN</au><au>CHOI YOOJEONG</au><au>SONG DAESEOK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><date>2023-03-16</date><risdate>2023</risdate><abstract>The present invention relates to: a composition for a resist upper layer film, which contains: an acrylic copolymer including a first structural unit represented by a chemical formula M-1 and a second structural unit represented by at least one of chemical formulas M-2A, M-2B and M-2C; acidic compounds; and a solvent, and a pattern formation method using the composition for the resist upper layer film. Details of the chemical formulas M-1, M-2A, M-2B, and M-2C are as described in the specification.
화학식 M-1로 표시되는 제1 구조 단위, 및 화학식 M-2A, 화학식 M-2B 및 화학식 M-2C 중 적어도 하나로 표시되는 제2 구조 단위를 포함하는 아크릴계 공중합체; 산성 화합물; 그리고 용매를 포함하는 레지스트 상층막용 조성물과 상기 레지스트 상층막용 조성물을 이용하는 패턴형성방법에 관한 것이다. 상기 화학식 M-1, 화학식 M-2A, 화학식 M-2B 및 화학식 M-2C에 대한 상세 내용은 명세서에 기재한 바와 같다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP |
| title | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION |
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