RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

The present invention relates to: a composition for a resist upper layer film, which contains: an acrylic copolymer including a first structural unit represented by a chemical formula M-1 and a second structural unit represented by at least one of chemical formulas M-2A, M-2B and M-2C; acidic compou...

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Bibliographische Detailangaben
Hauptverfasser: CHUN MINKI, KWON SOONHYUNG, BAE SHINHYO, KIM SEONGJIN, CHO AHRA, BAEK JAEYEOL, PARK HYEON, KIM MINSOO, JIN HWAYOUNG, NAMGUNG RAN, CHOI YOOJEONG, SONG DAESEOK
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:The present invention relates to: a composition for a resist upper layer film, which contains: an acrylic copolymer including a first structural unit represented by a chemical formula M-1 and a second structural unit represented by at least one of chemical formulas M-2A, M-2B and M-2C; acidic compounds; and a solvent, and a pattern formation method using the composition for the resist upper layer film. Details of the chemical formulas M-1, M-2A, M-2B, and M-2C are as described in the specification. 화학식 M-1로 표시되는 제1 구조 단위, 및 화학식 M-2A, 화학식 M-2B 및 화학식 M-2C 중 적어도 하나로 표시되는 제2 구조 단위를 포함하는 아크릴계 공중합체; 산성 화합물; 그리고 용매를 포함하는 레지스트 상층막용 조성물과 상기 레지스트 상층막용 조성물을 이용하는 패턴형성방법에 관한 것이다. 상기 화학식 M-1, 화학식 M-2A, 화학식 M-2B 및 화학식 M-2C에 대한 상세 내용은 명세서에 기재한 바와 같다.