RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

The present invention relates to a resist topcoat composition comprising an acrylic polymer containing a structural unit containing a hydroxyl group and fluorine; at least one of an amine compound containing at least one nitrogen and a heterocyclic compound containing at least one nitrogen; and a so...

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Bibliographische Detailangaben
Hauptverfasser:	CHUN MINKI, KWON SOONHYUNG, BAE SHINHYO, KIM SEONGJIN, CHO AHRA, BAEK JAEYEOL, PARK HYEON, KIM MINSOO, JIN HWAYOUNG, NAMGUNG RAN, CHOI YOOJEONG, SONG DAESEOK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS
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Beschreibung
Zusammenfassung:	The present invention relates to a resist topcoat composition comprising an acrylic polymer containing a structural unit containing a hydroxyl group and fluorine; at least one of an amine compound containing at least one nitrogen and a heterocyclic compound containing at least one nitrogen; and a solvent, and a pattern forming method using the resist topcoat composition. The resist topcoat composition of the present invention can implement a high-resolution pattern and improve the yield by removing single line open (SLO) defects. 하이드록시기 및 불소를 함유하는 구조 단위를 포함하는 아크릴계 중합체; 적어도 하나의 질소를 포함하는 아민 화합물, 및 적어도 하나의 질소를 함유하는 헤테로 고리 화합물 중 적어도 1종; 및 용매를 포함하는 레지스트 상층막용 조성물; 그리고 상기 레지스트 상층막용 조성물을 이용하는 패턴형성방법에 관한 것이다.