Apparatus for Processing Substrate

The present invention relates to a substrate processing apparatus including: a chamber; a substrate support unit for supporting at least one substrate inside the chamber; a lower plate disposed above the substrate support unit; and an upper plate disposed above the lower plate. The upper plate inclu...

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Bibliographische Detailangaben
Hauptverfasser:	SANG YUN CHA, KIM JUN YOUNG, LEE JI HUN, JANG DAE SOO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a substrate processing apparatus including: a chamber; a substrate support unit for supporting at least one substrate inside the chamber; a lower plate disposed above the substrate support unit; and an upper plate disposed above the lower plate. The upper plate includes a first injection hole for providing a first gas and a second injection hole for providing a second gas. The lower plate includes a first opening disposed below the first injection hole to pass the first gas supplied from the first injection hole, and a second opening disposed below the second injection hole to pass the second gas supplied from the second injection hole. 본 발명은 챔버; 상기 챔버의 내부에서 적어도 하나의 기판을 지지하는 기판지지부; 상기 기판지지부의 상측에 배치된 하부플레이트; 및 상기 하부플레이트의 상측에 배치된 상부플레이트를 포함하고, 상기 상부플레이트는 제1가스를 제공하는 제1분사홀, 및 제2가스를 제공하는 제2분사홀을 포함하며, 상기 하부플레이트는 상기 제1분사홀로부터 제공된 제1가스를 통과시키도록 상기 제1분사홀의 하측에 배치된 제1개구, 및 상기 제2분사홀로부터 제공된 제2가스를 통과시키도록 상기 제2분사홀의 하측에 배치된 제2개구를 포함하는 기판처리장치에 관한 것이다.