ELECTROSTATIC DISCHARGE PROTECTION CELL AND ANTENNA INTEGRATED WITH THROUGH SILICON VIA

Disclosed is a semiconductor device comprising: a through-silicon via (TSV) disposed in a TSV region of a substrate to extend through the substrate; an ESD cell adjacent to a first end portion of the TSV to come in contact with the TSV region, wherein the ESD cell includes a set of diodes electrical...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YU HO CHE, WANG XINYONG, CHEN CHIH LIANG, CHANG TZU HENG, CHANG FONG YUAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ANTENNAS, i.e. RADIO AERIALS BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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