RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

The present invention relates to: a resist underlayer film composition containing a polymer having a structural unit represented by chemical formula 1, a structural unit represented by chemical formula 2, or a combination thereof, and a solvent; and a pattern-forming method using the resist underlay...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KWON SOONHYUNG, CHUN MINKI, KIM SEONGJIN, BAEK JAEYEOL, KIM MINSOO, PARK HYEON, JIN HWAYOUNG, NAMGUNG RAN, CHOI YOOJEONG, SONG DAESEOK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	The present invention relates to: a resist underlayer film composition containing a polymer having a structural unit represented by chemical formula 1, a structural unit represented by chemical formula 2, or a combination thereof, and a solvent; and a pattern-forming method using the resist underlayer film composition. The definitions of the formula 1 and formula 2 are as described in the specification. The pattern collapse of a resist can be prevented. 하기 화학식 1로 표시되는 구조단위, 하기 화학식 2로 표시되는 구조단위, 또는 이들의 조합을 포함하는 중합체, 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성방법에 관한 것이다. [화학식 1] JPEGpat00033.jpg41109 [화학식 2] JPEGpat00034.jpg63112 상기 화학식 1 및 화학식 2의 정의는 명세서 내에 기재한 바와 같다.