Slurry composition for chemical mechanical polishing

Provided is a chemical mechanical polishing (CMP) slurry composition for polishing polysilicon, including: a first organic polishing booster having a quaternary amine group; a second organic polishing booster that is an amino acid; and a carrier, and having an inorganic abrasive particle content of...

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Bibliographische Detailangaben
Hauptverfasser:	KIM IN KWON, BYUN YEA RIN, HUR WON KI, KIM SANG KYUN, LEE HYO SAN, PARK SANG HYUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	Provided is a chemical mechanical polishing (CMP) slurry composition for polishing polysilicon, including: a first organic polishing booster having a quaternary amine group; a second organic polishing booster that is an amino acid; and a carrier, and having an inorganic abrasive particle content of less than 0.01 wt%. Polysilicon can be removed at a high rate without using an inorganic abrasive, and furthermore, etching selectivity with respect to a silicon oxide film or a silicon nitride film can be greatly improved by using the slurry composition of the present invention. 4차 아민기를 갖는 제 1 유기 연마 부스터; 아미노산인 제 2 유기 연마 부스터; 및 캐리어를 포함하고, 무기 연마 입자의 함량이 0.01 중량% 미만인 폴리실리콘 연마용 화학적 기계적 연마(chemical mechanical polishing, CMP) 슬러리 조성물이 제공된다. 본 발명의 슬러리 조성물을 이용하면 무기 연마제의 사용 없이도 높은 속도로 폴리실리콘을 제거할 수 있고, 나아가 실리콘 산화막 또는 실리콘 질화막에 대한 식각 선택비도 크게 향상될 수 있다.