RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

The present invention relates to a resist underlayer composition comprising a polymer including a main chain, a side chain, or a main chain and a side chain of a heterocycle containing two or more nitrogen atoms in a ring, a compound including a moiety represented by a chemical formula 1 below, and...

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Bibliographische Detailangaben
Hauptverfasser:	KWON SOONHYUNG, KIM SEONGJIN, BAEK JAEYEOL, KIM MINSOO, PARK HYEON, JIN HWAYOUNG, CHOI YOOJEONG, NAMGUNG RAN, SONG DAESEOK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	The present invention relates to a resist underlayer composition comprising a polymer including a main chain, a side chain, or a main chain and a side chain of a heterocycle containing two or more nitrogen atoms in a ring, a compound including a moiety represented by a chemical formula 1 below, and a solvent; and a method for forming patterns using the resist underlayer composition. The definition of the chemical formula 1 is as described in the specification. Provided is the resist underlayer composition, capable of improving coating uniformity, gap-fill properties, and resist pattern formation properties by improving cross-linking properties. 고리 내 질소 원자를 2 이상 포함하는 헤테로 고리를 주쇄, 측쇄, 또는 주쇄와 측쇄에 포함하는 중합체, 하기 화학식 1로 표현되는 모이어티를 포함하는 화합물, 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성방법에 관한 것이다: [화학식 1] JPEGpat00059.jpg35131 상기 화학식 1의 정의는 명세서 내에 기재한 바와 같다.